Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Yi Sun; Kun Zhou; Meixin Feng; Zengcheng Li; Yu Zhou; Qian Sun; Jianping Liu; Liqun Zhang; Deyao Li; Xiaojuan Sun; Dabing Li; Shuming Zhang; Masao Ikeda; Hui Yang

doi:10.1038/s41377-018-0008-y

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Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Letter

- Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
- Light: Science & Applications Vol. 7, Issue 4, Pages: 26-31(2018)
- Affiliations：
  
  1.Key Laboratory of Nanodevices and Applications, Suzhou Institute of NanoTech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
  2.School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
  3.Accelink Technologies Co., Ltd, Wuhan 430205, China
  4.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics (CIOMP), CAS, Changchun 130033, China
- Author bio：
  
  Qian Sun (qsun2011@sinano.ac.cn)
  Jianping Liu (jpliu2010@sinano.ac.cn)
- Funds：
- DOI：10.1038/s41377-018-0008-y
  CLC：
- Published：2018，
  
  Published Online：13 June 2018，
  
  Received：22 August 2017，
  
  Revised：10 January 2018，
  
  Accepted：26 February 2018
- Accepted：
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Sun, Y. et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light: Science & Applications, 7, 26-31 (2018).
DOI：

Sun, Y. et al. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light: Science & Applications, 7, 26-31 (2018). DOI： 10.1038/s41377-018-0008-y.

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references

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