Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

Yingtao Hu; Di Liang; Kunal Mukherjee; Youli Li; Chong Zhang; Geza Kurczveil; Xue Huang; Raymond G. Beausoleil

doi:10.1038/s41377-019-0202-6

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Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

Articles

- Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template
- Light: Science & Applications Vol. 8, Issue 5, Pages: 872-880(2019)
- Affiliations：
  
  1.Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304, USA
  2.Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USA
- Author bio：
  
  Yingtao Hu (yingtao.hu@hpe.com)
  Di Liang (di.liang@hpe.com)
- Funds：
- DOI：10.1038/s41377-019-0202-6
  CLC：
- Published：2019，
  
  Published Online：09 October 2019，
  
  Received：05 May 2019，
  
  Revised：16 August 2019，
  
  Accepted：11 September 2019
- Accepted：
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Hu, Y. T. et al. Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light: Science & Applications, 8, 872-880 (2019).
DOI：

Hu, Y. T. et al. Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light: Science & Applications, 8, 872-880 (2019). DOI： 10.1038/s41377-019-0202-6.

摘要

Abstract

Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers

high-performance computers

and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a Ⅲ/Ⅴ laser chip or optical gain materials onto a silicon substrate. A number of integration approaches

including flip-chip bonding

molecule or polymer wafer bonding

and monolithic Ⅲ/Ⅴ epitaxy

have been extensively explored in the past decade. Here

we demonstrate a novel photonic integration method of epitaxial regrowth of Ⅲ/Ⅴ on a Ⅲ/Ⅴ-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correla

ted root causes

i.e.

lattice

thermal

and domain mismatches

which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 10

-2

two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm

with a minimal threshold current density of 813 A/cm

. This generic concept can be applied to other material systems to provide higher integration density

more functionalities and lower total cost for photonics as well as microelectronics

MEMS

and many other applications.

关键词

Keywords

references

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