Adding memory to pressure-sensitive phosphors

Robin R. Petit; Simon E. Michels; Ang Feng; Philippe F. Smet

doi:10.1038/s41377-019-0235-x

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Adding memory to pressure-sensitive phosphors

Article

- Adding memory to pressure-sensitive phosphors
- Light: Science & Applications Vol. 8, Issue 6, Pages: 1209-1218(2019)
- Affiliations：
  
  LumiLab, Department of Solid State Sciences, Ghent University, Krijgslaan 281- S1, 9000 Gent, Belgium
- Author bio：
  
  Philippe F. Smet (philippe.smet@ugent.be)
- Funds：
- DOI：10.1038/s41377-019-0235-x
  CLC：
- Published：2019，
  
  Published Online：25 December 2019，
  
  Received：04 February 2019，
  
  Revised：26 November 2019，
  
  Accepted：10 December 2019
- Accepted：
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Petit, R. R. et al. Adding memory to pressure-sensitive phosphors. Light: Science & Applications, 8, 1209-1218 (2019).
DOI：

Petit, R. R. et al. Adding memory to pressure-sensitive phosphors. Light: Science & Applications, 8, 1209-1218 (2019). DOI： 10.1038/s41377-019-0235-x.

摘要

Abstract

Mechanoluminescence (ML) is the phenomenon describing the emission of light during mechanical action on a solid

leading to applications such as pressure sensing

damage detection and visualization of stress distributions. In most cases

this mechanical action releases energy that was previously stored in the crystal lattice of the phosphor by means of trapped charge carriers. A drawback is the need to record the ML emission during a pressure event. In this work

we provide a method for adding a memory function to these pressure-sensitive phosphors

allowing an optical readout of the location and intensity of a pressure event in excess of 72 h after the event. This is achieved in the BaSi

:Eu

phosphor

where a broad trap depth distribution essential for the process is present. By merging optically stimulated luminescence (OSL)

thermoluminescence (TL) and ML measurements

the influence of light

heat and pressure on the trap depth distribution is carefully analysed. This analysis demonstrates that mechanical action can not only lead to direct light emission but also to a reshuffling of trap occupations. This memory effect not only is expected to lead to new pressure sensing applications but also offers an approach to study charge carrier transitions in energy storage phosphors.

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Keywords

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