Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

Li Chen; Wei Lin; Huiqiong Wang; Jinchai Li; Junyong Kang

doi:10.1038/s41377-020-00342-3

Go to Nature Website

Your Location：

Home >

Browse articles >

Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

Letters

- Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling
- Light: Science & Applications Vol. 9, Issue 4, Pages: 874-881(2020)
- Affiliations：
  
  1.Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Provincial Key Laboratory of Semiconductor Materials and Applications; Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices; Department of Physics, Xiamen University, 361005 Xiamen, China
  2.Present address: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 315201 Ningbo, Zhejiang, China
- Author bio：
  
  Wei Lin (linwei@xmu.edu.cn)
  Junyong Kang (jykang@xmu.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00342-3
  CLC：
- Published：2020，
  
  Published Online：18 June 2020，
  
  Received：21 October 2019，
  
  Revised：29 May 2020，
  
  Accepted：04 June 2020
- Accepted：
Scan QR Code
Chen, L. et al. Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling. Light: Science & Applications, 9, 874-881 (2019).
DOI：

Chen, L. et al. Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling. Light: Science & Applications, 9, 874-881 (2019). DOI： 10.1038/s41377-020-00342-3.

摘要

Abstract

AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices

abnormal carrier confinement behaviour has been observed for

-plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-off hole band (CH band) composed of

orbitals

the abnormal confinement becomes the limiting factor for efficient UV light emission. This observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels

which has been an established conclusion for conventional continuous potential wells. In particular

orientational

orbitals are sensitive to the confinement direction in line with the conducting direction

which affects the orbital intercoupling. In this work

models of Al

0.75

0.25

N/AlN

QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier regions. Orbital engineering of QWs was implemented by changing the orbital state confinement

with the well plane inclined from 0° to 90° at a step of 30° (referred to the

plane). The barrier potential and transition rate at the band edge were enhanced through this orbital engineering. The concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi- and nonpolar planes implemented in microrods with pyramid-shaped tops. The higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence (CL) maps.

关键词

Keywords

references

Chen, L. et al. Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals.ACS Photonics4, 2197–2202 (2017)..

Harrison, W. A.Elementary Electronic Structure.(World Scientific, Singapore, 2004).

Limpijumnong, S.&Lambrecht, W. R. L. Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN.Phys. Rev. B63, 104103 (2001)..

Cao, Y. W. et al. Engineered Mott ground state in a LaTiO3+δ/LaNiO3heterostructure.Nat. Commun.7, 10418 (2016)..

Disa, A. S. et al. Orbital engineering in symmetry-breaking polar heterostructures.Phys. Rev. Lett.114, 026801 (2015)..

Cao, Y. et al. Unconventional superconductivity in magic-angle graphene superlattices.Nature556, 43–50 (2018)..

Cao, Y. et al. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices.Nature556, 80–84 (2018)..

Kresse, G.&Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set.Comput. Mater. Sci.6, 15–50 (1996)..

Kresse, G.&Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.Phys. Rev. B54, 11169–11186 (1996)..

Perdew, J. P.&Yue, W. Accurate and simple density functional for the electronic exchange energy: generalized gradient approximation.Phys. Rev. B33, 8800–8802 (1986)..

Perdew, J. P. et al. Atoms, molecules, solids, and surfaces: applications of the generalized gradient approximation for exchange and correlation.Phys. Rev. B46, 6671–6687 (1992)..

Monkhorst, H. J.&Pack, J. D. Special points for Brillouin-zone integrations.Phys. Rev. B13, 5188–5192 (1976)..

Yang, W. H. et al. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.Sci. Rep.4, 5166 (2014)..

Zhuang, Q. et al. Defect suppression in AlN epilayer using hierarchical growth units.J. Phys. Chem. C.117, 14158–14164 (2013)..

Gao, N. et al. Quantum state engineering with ultra-short-period (AlN)m/(GaN)nsuperlattices for narrowband deep-ultraviolet detection.Nanoscale6, 14733–14739 (2014)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰