Enhancing the graphene photocurrent using surface plasmons and a p-n junction

Di Wang; Andres E. Llacsahuanga Allcca; Ting-Fung Chung; Alexander V. Kildishev; Yong P. Chen; Alexandra Boltasseva; Vladimir M. Shalaev

doi:10.1038/s41377-020-00344-1

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Enhancing the graphene photocurrent using surface plasmons and a p-n junction

Article

- Enhancing the graphene photocurrent using surface plasmons and a p-n junction
- Light: Science & Applications Vol. 9, Issue 4, Pages: 1228-1237(2020)
- Affiliations：
  
  1.School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
  2.Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
  3.Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA
  4.Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, IN 47907, USA
- Author bio：
  
  Alexandra Boltasseva (aeb@purdue.edu)
  Vladimir M. Shalaev (shalaev@purdue.edu)
- Funds：
- DOI：10.1038/s41377-020-00344-1
  CLC：
- Published：2020，
  
  Published Online：20 July 2020，
  
  Received：04 December 2019，
  
  Revised：27 May 2020，
  
  Accepted：08 June 2020
- Accepted：
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Wang, D. et al. Enhancing the graphene photocurrent using surface plasmons and a p-n junction. Light: Science & Applications, 9, 1228-1237 (2020).
DOI：

Wang, D. et al. Enhancing the graphene photocurrent using surface plasmons and a p-n junction. Light: Science & Applications, 9, 1228-1237 (2020). DOI： 10.1038/s41377-020-00344-1.

摘要

Abstract

The recently proposed concept of graphene photodetectors offers remarkable properties such as unprecedented compactness

ultrabroadband detection

and an ultrafast response speed. However

owing to the low optical absorption of pristine monolayer graphene

the intrinsically low responsivity of graphene photodetectors significantly hinders the development of practical devices. To address this issue

numerous efforts have thus far been made to enhance the light–graphene interaction using plasmonic structures. These approaches

however

can be significantly advanced by leveraging the other critical aspect of graphene photoresponsivity enhancement—electrical junction control. It has been reported that the dominant photocarrier generation mechanism in graphene is the photothermoelectric (PTE) effect. Thus

the two energy conversion mechanisms involved in the graphene photodetection process are light-to-heat and heat-to-electricity conversions. In this work

we propose a meticulously designed device architecture to simultaneously enhance the two conversion efficiencies. Specifically

a gap plasmon structure is used to absorb a major portion of the incident light to induce localized heating

and a pair of split gates is used to produce a p-n junction in graphene to augment the PTE current generation. The gap plasmon structure and the split gates are designed to share common key components so that the proposed device architecture concurrently realizes both optical and electrical enhancements. We experimentally demonstrate the dominance of the PTE effect in graphene photocurrent generation and observe a 25-fold increase in the generated photocurrent compared to the un-enhanced cases. While further photocurrent enhancement can be achieved by applying a DC bias

the proposed device concept shows vast potential for practical applications.

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references

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