Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology

Shuo Yang; Jiacheng Yao; Yingnan Quan; Mingyue Hu; Rui Su; Ming Gao; Donglai Han; Jinghai Yang

doi:10.1038/s41377-020-00361-0

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Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology

Original Articles

- Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology
- Light: Science & Applications Vol. 9, Issue 4, Pages: 1143-1149(2020)
- Affiliations：
  
  1.College of Science, Changchun University, Changchun 130022, China
  2.National Demonstration Centre for Experimental Physics Education, Jilin Normal University, Siping 136000, China
  3.Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130012, China
  4.Key Laboratory of Preparation and Application of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
  5.School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
- Author bio：
  
  Ming Gao (gaomingphy@126.com)
  Donglai Han (DLhan_1015@163.com)
  Jinghai Yang (jhyang1@jlnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00361-0
  CLC：
- Published：2020，
  
  Published Online：10 July 2020，
  
  Received：13 January 2020，
  
  Revised：06 June 2020，
  
  Accepted：27 June 2020
- Accepted：
Scan QR Code
Yang, S. et al. Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology. Light: Science & Applications, 9, 1143-1149 (2020).
DOI：

Yang, S. et al. Monitoring the charge-transfer process in a Nd-doped semiconductor based on photoluminescence and SERS technology. Light: Science & Applications, 9, 1143-1149 (2020). DOI： 10.1038/s41377-020-00361-0.

摘要

Abstract

Surface-enhanced Raman scattering (SERS) and photoluminescence (PL) are important photoexcitation spectroscopy techniques; however

understanding how to analyze and modulate the relationship between SERS and PL is rather important for enhancing SERS

having a great effect on practical applications. In this work

a charge-transfer (CT) mechanism is proposed to investigate the change and relationships between SERS and PL. Analyzing the change in PL and SERS before and after the adsorption of the probe molecules on Nd-doped ZnO indicates that the unique optical characteristics of Nd

ions increase the SERS signal. On the other hand

the observed SERS can be used to explain the cause of PL background reduction. This study demonstrates that modulating the interaction between the probe molecules and the substrate can not only enhance Raman scattering but also reduce the SERS background. Our work also provides a guideline for the investigation of CT as well as a new method for exploring fluorescence quenching.

关键词

Keywords

references

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