Giant photothermoelectric effect in silicon nanoribbon photodetectors

Wei Dai; Weikang Liu; Jian Yang; Chao Xu; Alessandro Alabastri; Chang Liu; Peter Nordlander; Zhiqiang Guan; Hongxing Xu

doi:10.1038/s41377-020-00364-x

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Giant photothermoelectric effect in silicon nanoribbon photodetectors

Original Articles

- Giant photothermoelectric effect in silicon nanoribbon photodetectors
- Light: Science & Applications Vol. 9, Issue 4, Pages: 1178-1185(2020)
- Affiliations：
  
  1.School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
  2.Department of Physics and Astronomy, Department of Electrical and Computer Engineering and Laboratory for Nanophotonics, Rice University, Houston, TX 77005, USA
  3.The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Author bio：
  
  Zhiqiang Guan (zhiqiang.guan@whu.edu.cn)
  Hongxing Xu (hxxu@whu.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00364-x
  CLC：
- Published：2020，
  
  Published Online：14 July 2020，
  
  Received：31 January 2020，
  
  Revised：13 June 2020，
  
  Accepted：28 June 2020
- Accepted：
Scan QR Code
Dai, W. et al. Giant photothermoelectric effect in silicon nanoribbon photodetectors. Light: Science & Applications, 9, 1178-1185 (2020).
DOI：

Dai, W. et al. Giant photothermoelectric effect in silicon nanoribbon photodetectors. Light: Science & Applications, 9, 1178-1185 (2020). DOI： 10.1038/s41377-020-00364-x.

摘要

Abstract

The photothermoelectric (PTE) effect enables efficient harvesting of the energy of photogenerated hot carriers and is a promising choice for high-efficiency photoelectric energy conversion and photodetection. Recently

the PTE effect was reported in low-dimensional nanomaterials

suggesting the possibility of optimizing their energy conversion efficiency. Unfortunately

the PTE effect becomes extremely inefficient in low-dimensional nanomaterials

owing to intrinsic disadvantages

such as low optical absorption and immature fabrication methods. In this study

a giant PTE effect was observed in lightly doped p-type silicon nanoribbons caused by photogenerated hot carriers. The open-circuit photovoltage responsivity of the device was 3-4 orders of magnitude higher than those of previously reported PTE devices. The measured photovoltage responses fit very well with the proposed photothermoelectric multiphysics models. This research proposes an application of the PTE effect and a possible method for utilizing hot carriers in semiconductors to significantly improve their photoelectric conversion efficiency.

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references

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