Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Jiayue Han; Meiyu He; Ming Yang; Qi Han; Fang Wang; Fang Zhong; Mengjian Xu; Qing Li; He Zhu; Chongxin Shan; Weida Hu; Xiaoqing Chen; Xinran Wang; Jun Gou; Zhiming Wu; Jun Wang

doi:10.1038/s41377-020-00406-4

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Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

Original Articles

- Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents
- Light: Science & Applications Vol. 9, Issue 5, Pages: 1611-1620(2020)
- Affiliations：
  
  1.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
  2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai 200083, China
  3.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
  4.Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
  5.National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  6.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
- Author bio：
  
  Weida Hu (wdhu@mail.sitp.ac.cn)
  Xinran Wang (xrwang@nju.edu.cn)
  Jun Wang (wjun@uestc.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00406-4
  CLC：
- Published：2020，
  
  Published Online：23 September 2020，
  
  Received：09 May 2020，
  
  Revised：31 August 2020，
  
  Accepted：01 September 2020
- Accepted：
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Han, J. Y. et al. Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents. Light: Science & Applications, 9, 1611-1620 (2020).
DOI：

Han, J. Y. et al. Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents. Light: Science & Applications, 9, 1611-1620 (2020). DOI： 10.1038/s41377-020-00406-4.

摘要

Abstract

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However

for most phototransistors

the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper

we demonstrate a graphene/C

/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent

remarkable logical photocurrent switching under infrared light modulation occurs in a thick C

layer (11 nm) device

which implies competition of the photogenerated carriers between graphene/C

and C

/pentacene. Meanwhile

we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore

infrared light modulation of a thin C

(5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W

and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C

devices. In addition

the tuneable bandwidth of the infrared response from 10 to 3 × 1

Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

关键词

Keywords

references

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