Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng; Xiaolin Chen; Yulong Fan; David J. Srolovitz; Dangyuan Lei

doi:10.1038/s41377-020-00421-5

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Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Reviews

- Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications
- Light: Science & Applications Vol. 9, Issue 6, Pages: 1745-1769(2020)
- Affiliations：
  
  1.Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
  2.Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, China
- Author bio：
  
  Dangyuan Lei (dangylei@cityu.edu.hk)
- Funds：
- DOI：10.1038/s41377-020-00421-5
  CLC：
- Published：2020，
  
  Published Online：23 November 2020，
  
  Received：23 March 2020，
  
  Revised：10 October 2020，
  
  Accepted：14 October 2020
- Accepted：
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Peng, Z. W. et al. Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications. Light: Science & Applications, 9, 1745-1769 (2020).
DOI：

Peng, Z. W. et al. Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications. Light: Science & Applications, 9, 1745-1769 (2020). DOI： 10.1038/s41377-020-00421-5.

摘要

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical

electronic

and optical properties. Due to their inherent exceptional mechanical flexibility and strength

these 2D materials provide an ideal platform for strain engineering

enabling versatile modulation and significant enhancement of their optical properties. For instance

recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains

such as uniaxial strain and biaxial strain. Meanwhile

many nondestructive optical measurement methods

typically including absorption

reflectance

photoluminescence

and Raman spectroscopies

can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields

and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene

followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials

discussions on existing open questions

and an outlook on this intriguing emerging field.

关键词

Keywords

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