Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Eva A. A. Pogna; Mahdi Asgari; Valentina Zannier; Lucia Sorba; Leonardo Viti; Miriam S. Vitiello

doi:10.1038/s41377-020-00425-1

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Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Original Articles

- Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy
- Light: Science & Applications Vol. 9, Issue 6, Pages: 1944-1955(2020)
- Affiliations：
  
  NEST, CNR—Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
- Author bio：
  
  Eva A. A. Pogna (eva.pogna@nano.cnr.it)
  Miriam S. Vitiello (miriam.vitiello@sns.it)
- Funds：
- DOI：10.1038/s41377-020-00425-1
  CLC：
- Published：2020，
  
  Published Online：19 November 2020，
  
  Received：03 April 2020，
  
  Revised：12 October 2020，
  
  Accepted：28 October 2020
- Accepted：
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Pogna, E. A. A. et al. Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy. Light: Science & Applications, 9, 1944-1955 (2020).
DOI：

Pogna, E. A. A. et al. Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy. Light: Science & Applications, 9, 1944-1955 (2020). DOI： 10.1038/s41377-020-00425-1.

摘要

Abstract

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (

1 nW Hz

−

1/2

) and high responsivities (

100 V/W). Nano-engineering an NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics

but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements

however

cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here

we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and mon

itoring both electrical and optical readouts

we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping

therefore providing a route to engineer photo-responses by design.

关键词

Keywords

references

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