Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors

Yuhan Wang; Zhonghui Nie; Fengqiu Wang

doi:10.1038/s41377-020-00430-4

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Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors

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- Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors
- Light: Science & Applications Vol. 9, Issue 6, Pages: 1729-1744(2020)
- Affiliations：
  
  1.School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  2.Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing University, Nanjing 210093, China
  3.MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, 210094 Nanjing, China
- Author bio：
  
  Fengqiu Wang (fwang@nju.edu.cn)
- Funds：
- DOI：10.1038/s41377-020-00430-4
  CLC：
- Published：2020，
  
  Published Online：23 November 2020，
  
  Received：12 July 2020，
  
  Revised：09 October 2020，
  
  Accepted：06 November 2020
- Accepted：
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Wang, Y. H., Nie, Z. H. & Wang, F. Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light: Science & Applications, 9, 1729-1744 (2020).
DOI：

Wang, Y. H., Nie, Z. H. & Wang, F. Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light: Science & Applications, 9, 1729-1744 (2020). DOI： 10.1038/s41377-020-00430-4.

摘要

Abstract

Due to strong Coulomb interactions

two-dimensional (2D) semiconductors can support excitons with large binding energies and complex many-particle states. Their strong light-matter coupling and emerging excitonic phenomena make them potential candidates for next-generation optoelectronic and valleytronic devices. The relaxation dynamics of optically excited states are a key ingredient of excitonic physics and directly impact the quantum efficiency and operating bandwidth of most photonic devices. Here

we summarize recent efforts in probing and modulating the photocarrier relaxation dynamics in 2D semiconductors. We classify these results according to the relaxation pathways or mechanisms they are associated with. The approaches discussed include both tailoring sample properties

such as the defect distribution and band structure

and applying external stimuli such as electric fields and mechanical strain. Particular emphasis is placed on discussing how the unique features of 2D semiconductors

including enhanced Coulomb interactions

sensitivity to the surrounding environment

flexible van der Waals (vdW) heterostructure construction

and non-degenerate valley/spin index of 2D transition metal dichalcogenides (TMDs)

manifest themselves during photocarrier relaxation and how they can be manipulated. The extensive physical mechanisms that can be used to modulate photocarrier relaxation dynamics are instrumental for understanding and utilizing excitonic states in 2D semiconductors.

关键词

Keywords

references

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