Raman lasing and soliton mode-locking in lithium niobate microresonators

Mengjie Yu; Yoshitomo Okawachi; Rebecca Cheng; Cheng Wang; Mian Zhang; Alexander L. Gaeta; Marko Lončar

doi:10.1038/s41377-020-0246-7

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Raman lasing and soliton mode-locking in lithium niobate microresonators

Article

- Raman lasing and soliton mode-locking in lithium niobate microresonators
- Light: Science & Applications Vol. 9, Issue 1, Pages: 82-88(2020)
- Affiliations：
  
  1.Department John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
  2.Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
  3.Department of Electronic Engineering & State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong, China
  4.HyperLight Corporation, 501 Massachusetts Avenue, Cambridge, MA 02139, USA
- Author bio：
  
  Marko Lončar (loncar@seas.harvard.edu)
- Funds：
- DOI：10.1038/s41377-020-0246-7
  CLC：
- Published：2020，
  
  Published Online：20 January 2020，
  
  Received：27 June 2019，
  
  Revised：30 December 2019，
  
  Accepted：06 January 2020
- Accepted：
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Yu, M. J. et al. Raman lasing and soliton mode-locking in lithium niobate microresonators. Light: Science & Applications, 9, 82–88 (2020).
DOI：

Yu, M. J. et al. Raman lasing and soliton mode-locking in lithium niobate microresonators. Light: Science & Applications, 9, 82–88 (2020). DOI： 10.1038/s41377-020-0246-7.

摘要

Abstract

The recent advancement in lithium-niobite-on-insulator (LNOI) technology is opening up new opportunities in optoelectronics

as devices with better performance

lower power consumption and a smaller footprint can be realised due to the high optical confinement in the structures. The LNOI platform of

fers both large

(2)

and

(3)

nonlinearities along with the power of dispersion engineering

enabling brand new nonlinear photonic devices and applications for the next generation of integrated photonic circuits. However

Raman scattering and its interaction with other nonlinear processes have not been extensively studied in dispersion-engineered LNOI nanodevices. In this work

we characterise the Raman radiation spectra in a monolithic lithium niobate (LN) microresonator via selective excitation of Raman-active phonon modes. The dominant mode for the Raman oscillation is observed in the backward direction for a continuous-wave pump threshold power of 20?mW with a high differential quantum efficiency of 46%. We explore the effects of Raman scattering on Kerr optical frequency comb generation. We achieve mode-locked states in an X-cut LNOI chip through sufficient suppression of the Raman effect via cavity geometry control. Our analysis of the Raman effect provides guidance for the development of future chip-based photonic devices on the LNOI platform.

关键词

Keywords

references

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