Heterostructure and <italic style="font-style: italic">Q</italic>-factor engineering for low-threshold and persistent nanowire lasing

Stefan Skalsky; Yunyan Zhang; Juan Arturo Alanis; H. Aruni Fonseka; Ana M. Sanchez; Huiyun Liu; Patrick Parkinson

doi:10.1038/s41377-020-0279-y

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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Article

- Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
- Light: Science & Applications Vol. 9, Issue 2, Pages: 384-393(2020)
- Affiliations：
  
  1.Department of Physics and Astronomy and The Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK
  2.Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
  3.Department of Physics, University of Warwick, Coventry CV4 7AL, UK
- Author bio：
  
  Patrick Parkinson (patrick.parkinson@manchester.ac.uk)
- Funds：
- DOI：10.1038/s41377-020-0279-y
  CLC：
- Published：2020，
  
  Published Online：17 March 2020，
  
  Received：09 October 2019，
  
  Revised：10 February 2020，
  
  Accepted：02 March 2020
- Accepted：
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Skalsky, S. et al. Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing. Light: Science & Applications, 9, 384-393 (2020).
DOI：

Skalsky, S. et al. Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing. Light: Science & Applications, 9, 384-393 (2020). DOI： 10.1038/s41377-020-0279-y.

摘要

Abstract

Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity

-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures

revealing high

-factors of 1250 ± 90 corresponding to end-facet reflectivities of

= 0.73 ± 0.02. By using optimised direct-indirect band alignment in the active region

we dem

onstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm

-2

pulse

-1

) for Ⅲ-Ⅴ nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.

关键词

Keywords

references

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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

DOI：10.1038/s41377-020-0279-y

摘要

Abstract

关键词

Keywords

references