Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Amin Soltani; Frederik Kuschewski; Marlene Bonmann; Andrey Generalov; Andrei Vorobiev; Florian Ludwig; Matthias M. Wiecha; Dovilė Čibiraitė; Frederik Walla; Stephan Winnerl; Susanne C. Kehr; Lukas M. Eng; Jan Stake; Hartmut G. Roskos

doi:10.1038/s41377-020-0321-0

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Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Letters

- Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor
- Light: Science & Applications Vol. 9, Issue 4, Pages: 867-873(2020)
- Affiliations：
  
  1.Physikalisches Institut, Johann Wolfgang Goethe-Universität, Max-von-LaueStr. 1, D-60438 Frankfurt am Main, Germany
  2.Institut für Angewandte Physik, Technische Universität Dresden, Nöthnitzer Str. 61, D-01187 Dresden, Germany
  3.Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
  4.Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden, Germany
  5.Complexity and Topology in Quantum Matter (CT.QMAT), Cluster of Excellence EXC 2147, Dresden/ Würzburg, Germany
  6.Present address: Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150, Espoo, Finland
- Author bio：
  
  Amin Soltani (soltani@physik.uni-frankfurt.de)
  Hartmut G. Roskos (roskos@physik.uni-frankfurt.de)
- Funds：
- DOI：10.1038/s41377-020-0321-0
  CLC：
- Published：2020，
  
  Published Online：04 June 2020，
  
  Received：09 July 2019，
  
  Revised：27 March 2020，
  
  Accepted：22 April 2020
- Accepted：
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Soltani, A. et al. Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor. Light: Science & Applications, 9, 867-873 (2020).
DOI：

Soltani, A. et al. Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor. Light: Science & Applications, 9, 867-873 (2020). DOI： 10.1038/s41377-020-0321-0.

摘要

Abstract

Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs)

that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies

where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave

collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper

we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode

we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves

excited at 2 THz

are overdamped

and their decay time lies in the range of 25–70 fs

. Despite this short decay time

the decay length is rather long

i.e.

0.3-0.5 μm

because of the rather large propagation speed of the plasma waves

which is found to lie in the range of 3.5–7 × 10

m/s

in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted

$$ \frac{1}{4}$$

power law.

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Keywords

references

Fei, Z. et al. Gate-tuning of graphene plasmons revealed by infrared nano-imaging.Nature487, 82–85 (2012)..

Chen, J. N. et al. Optical nano-imaging of gate-tunable graphene plasmons.Nature487, 77–81 (2012)..

Bezares, F. J. et al. Intrinsic Plasmon-phonon interactions in highly doped graphene: a near-field imaging study.Nano Lett.17, 5908–5913 (2017)..

Lundeberg, M. B. et al. Tuning quantum nonlocal effects in graphene plasmonics.Science357, 187–191 (2017)..

Bandurin, D. A. et al. Negative local resistance caused by viscous electron backflow in graphene.Science351, 1055–1058 (2016)..

Ni, G. X. et al. Fundamental limits to graphene plasmonics.Nature557, 530–533 (2018)..

Koppens, F. H. L. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems.Nat. Nanotechnol.9, 780–793 (2014)..

Vicarelli, L. et al. Graphene field-effect transistors as room-temperature terahertz detectors.Nat. Mater.11, 865–871 (2012)..

Zak, A. et al. Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene.Nano Lett.14, 5834–5838 (2014)..

Dyakonov, M.&Shur, M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid.IEEE Trans. Electron Devices43, 380–387 (1996)..

Tauk, R. et al. Plasma wave detection of terahertz radiation by silicon field effects transistors: responsivity and noise equivalent power.Appl. Phys. Lett.89, 253511 (2006)..

Öjefors, E. et al. A 650 GHz focal-plane array in a quarter-micron CMOS process technology.IEEE J. Solid State Circuits44, 1968–1976 (2009)..

Lisauskas, A. et al. Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors.J. Appl. Phys.105, 114511 (2009)..

Dyakonov, M.&Shur, M. Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current.Phys. Rev. Lett.71, 2465–2468 (1993)..

Dyakonova, N. et al. THz emission related to hot plasmons and plasma wave instability in field effect transistors.Acta Phys. Pol120, 924–926 (2011)..

Otsuji, T. et al. Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations.Optical Eng.53, 031206 (2014)..

Lisauskas, A. et al. Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors.J. Appl. Phys.125,151614 (2019)..

Tomadin, A.&Polini, M. Theory of the plasma-wave photoresponse of a gated graphene sheet.Phys. Rev. B88, 205426 (2013)..

Ikamas, K. et al. Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique.Semicond. Sci. Technol.33, 124013 (2018)..

Ikamas, K. et al. Broadband terahertz power detectors based on 90-nm silicon CMOS transistors with flat responsivity up to 2.2 THz.IEEE Electron Device Lett.39, 1413–1416 (2018)..

Bauer, M. et al. A high-sensitivity AlGaN/GaN HEMT terahertz detector with integrated broadband bow-tie antenna.IEEE Trans. Terahertz Sci. Technol.9, 430–444 (2019)..

El Fatimy, A. et al. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors.Appl. Phys. Lett.89, 131926 (2006)..

Kang, S. et al. Resonant frequency response of plasma wave detectors.Appl. Phys. Lett.89, 213512 (2006)..

Shchepetov, A. et al. Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors.Appl. Phys. Lett.92, 242105 (2008)..

Dyer, G. C. et al. Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity.Appl. Phys. Lett.100, 083506 (2012)..

Bandurin, D. A. et al. Resonant terahertz detection using graphene plasmons.Nat. Commun.9, 5392 (2018)..

Boubanga-Tombet, S. et al. Plasmonic instabilities and terahertz waves amplification in graphene metamaterials.ArXiv1801.04518.

Boppel, S. et al. CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz.IEEE Trans. Microw. Theory Tech.60, 3834–3843 (2012)..

Khmyrova, I.&Seijyou, Y. Analysis of plasma oscillations in high-electron mobility transistor like structures: distributed circuit approach.Appl. Phys. Lett.91, 143515 (2007)..

Preu, S. et al. An improved model for non-resonant terahertz detection in field-effect transistors.J. Appl. Phys.111, 024502 (2012)..

Boppel, S. et al. 0.25-µm GaN TeraFETs optimized as THz power detectors and intensity-gradient sensors.IEEE Trans. Terahertz Sci. Technol.6, 348–350 (2016)..

Drexler, C. et al. Helicity sensitive terahertz radiation detection by field effect transistors.J. Appl. Phys.111, 124504 (2012)..

Javadi, E. et al. Terahertz detection with a low-cost packaged GaAs high-electron-mobility transistor.IEEE Trans. Terahertz Sci. Technol.9, 27–37 (2019)..

Esslinger, M. et al. Background-free imaging of plasmonic structures with cross-polarized apertureless scanning near-field optical microscopy.Rev. Sci. Instrum.83, 033704 (2012)..

Pollard, B. et al. Infrared vibrational nanospectroscopy by self-referenced interferometry.Nano Lett.16, 55–61(2016)..

Knoll, B.&Keilmann, F. Enhanced dielectric contrast in scattering-type scanning near-field optical microscopy.Opt. Commun.182, 321–328 (2000)..

Wurtz, G., Bachelot, R.&Royer, P. Areflection-mode apertureless scanning near-field optical microscope developed from a commercial scanning probe microscope.Rev. Sci. Instrum.69, 1735–1743 (1998)..

Taubner, T., Keilmann, F.&Hillenbrand, R. Nanoscale-resolved subsurface imaging by scattering-type near-field optical microscopy.Opt. Express13, 8893–8899 (2005)..

Krutokhvostov, R. et al. Enhanced resolution in subsurface near-field optical microscopy.Opt. Express20, 593–600 (2012)..

Moon, K. et al. Subsurface nanoimaging by broadband terahertz pulse near-field microscopy.Nano Lett.15, 549–552 (2015)..

Walla, F. et al. Anisotropic excitation of surface plasmon polaritons on a metal film by a scattering-type scanning near-field microscope with a non-rotationally-symmetric probe tip.Nanophotonics7, 269–276 (2018)..

Walla, F. et al. Near-field observation of guided-mode resonances on a metasurface via dielectric nanosphere excitation.ACS Photonics5, 4238–4243 (2018)..

Ryzhii, V. Terahertz plasma waves in gated graphene heterostructures.Jpn. J. Appl. Phys.45, L923 (2006)..

Monteverde, M. et al. Transport and elastic scattering times as probes of the nature of impurity scattering in single-layer and bilayer graphene.Phys. Rev. Lett.104, 126801 (2010)..

Hong, X., Zou, K.&Zhu, J. Quantum scattering time and its implications on scattering sources in graphene.Phys. Rev. B80, 241415(R) (2009)..

Zouaghi, W. et al. How good would the conductivity of graphene have to be to make single-layer-graphene metamaterials for terahertz frequencies feasible?Carbon94, 301–308 (2015)..

Kuschewski, F. et al. Narrow-band near-field nanoscopy in the spectral range from 1.3 to 8.5 THz.Appl. Phys. Lett.108, 113102 (2016)..

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