
1.Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
2.College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
3.University of Chinese Academy of Sciences, Beijing 100049, China
4.Department of Physics, Georgia Southern University, Statebore, GA 30460, USA
Yongfu Liu (liuyongfu@nimte.ac.cn)
Lei Wang (wanglei_keke@163.com)
Published:2020,
Published Online:15 May 2020,
Received:11 February 2020,
Revised:07 April 2020,
Accepted:28 April 2020
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Jia, Z. W. et al. Strategies to approach high performance in Cr3+-doped phosphors for high-power NIR-LED light sources. Light: Science & Applications, 9, 819-827 (2020).
Jia, Z. W. et al. Strategies to approach high performance in Cr3+-doped phosphors for high-power NIR-LED light sources. Light: Science & Applications, 9, 819-827 (2020). DOI: 10.1038/s41377-020-0326-8.
Broadband near-infrared (NI
R)-emitting phosphors are key for next-generation smart NIR light sources based on blue LEDs. To achieve excellent NIR phosphors
we propose a strategy of enhancing the crystallinity
modifying the micromorphology
and maintaining the valence state of Cr
3+
in Ca
3
Sc
2
Si
3
O
12
garnet (CSSG). By adding fluxes and sintering in a reducing atmosphere
the internal quantum efficiency (IQE) is greatly enhanced to 92.3%. The optimized CSSG:6%Cr
3+
exhibits excellent thermal stability. At 150 ℃
97.4% of the NIR emission at room temperature can be maintained. The fabricated NIR-LED device emits a high optical power of 109.9 mW at 520 mA. The performances of both the achieved phosphor and the NIR-LED are almost the best results until now. The mechanism for the optimization is investigated. An application of the NIR-LED light source is demonstrated.
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