Ultrafast transient sub-bandgap absorption of monolayer MoS<sub>2</sub>

Susobhan Das; Yadong Wang; Yunyun Dai; Shisheng Li; Zhipei Sun

doi:10.1038/s41377-021-00462-4

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Ultrafast transient sub-bandgap absorption of monolayer MoS₂

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- Ultrafast transient sub-bandgap absorption of monolayer MoS₂
- Light: Science & Applications Vol. 10, Issue 2, Pages: 234-242(2021)
- Affiliations：
  
  1.Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland
  2.International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Japan
  3.QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, Finland
- Author bio：
  
  Susobhan Das (Susobhan.das@aalto.fi)
  Zhipei Sun (zhipei.sun@aalto.fi)
- Funds：
- DOI：10.1038/s41377-021-00462-4
  CLC：
- Published：2021，
  
  Published Online：29 January 2021，
  
  Received：22 July 2020，
  
  Revised：21 December 2020，
  
  Accepted：30 December 2020
- Accepted：
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Das, S. et al. Ultrafast transient sub-bandgap absorption of monolayer MoS₂. Light: Science & Applications, 10, 234-242 (2021).
DOI：

Das, S. et al. Ultrafast transient sub-bandgap absorption of monolayer MoS₂. Light: Science & Applications, 10, 234-242 (2021). DOI： 10.1038/s41377-021-00462-4.

摘要

Abstract

The light–matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications

which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit

it is of great significance to study the light–matter interaction below the material bandgap. Here

we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap

we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e.

real carrier states in the short-wavelength region of ~ < 1 µm

and exciton states in the long wavelength region of ~ > 1 µm). Our results elucidate the fundamental understanding regarding the optical properties

excited carrier states

and carrier dynamics in the technologically important near-infrared region

which potentially leads to various photonic and optoelectronic applications (e.g.

excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

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references

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Ultrafast transient sub-bandgap absorption of monolayer MoS2

DOI：10.1038/s41377-021-00462-4

摘要

Abstract

关键词

Keywords

references

Ultrafast transient sub-bandgap absorption of monolayer MoS₂