Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Ying Jiang; Shula Chen; Weihao Zheng; Biyuan Zheng; Anlian Pan

doi:10.1038/s41377-021-00500-1

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Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Reviews

- Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures
- Light: Science & Applications Vol. 10, Issue 5, Pages: 720-748(2021)
- Affiliations：
  
  1.Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and College of Materials Science and Engineering, Hunan University, Changsha, China
  2.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China
- Author bio：
  
  Anlian Pan (anlian.pan@hnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00500-1
  CLC：
- Published：31 May 2021，
  
  Published Online：02 April 2021，
  
  Received：21 October 2020，
  
  Revised：08 February 2021，
  
  Accepted：24 February 2021
- Accepted：
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Jiang, Y. et al. Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures. Light: Science & Applications, 10, 720-748 (2021).
DOI：

Jiang, Y. et al. Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures. Light: Science & Applications, 10, 720-748 (2021). DOI： 10.1038/s41377-021-00500-1.

摘要

Abstract

Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-Ⅱ band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits

which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence

numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons

including revealing their ultrafast formation

long population recombination lifetimes

and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics

and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present

a systematic and comprehensive overview of interlayer exciton formation

relaxation

transport

and potential applications is still lacking. In this review

we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.

关键词

Keywords

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