Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

Jinchao Tong; Fei Suo; Tianning Zhang; Zhiming Huang; Junhao Chu; Dao Hua Zhang

doi:10.1038/s41377-021-00505-w

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Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

Articles

- Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection
- Light: Science & Applications Vol. 10, Issue 4, Pages: 600-609(2021)
- Affiliations：
  
  1.School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore, Singapore
  2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083 Shanghai, China
- Author bio：
  
  Jinchao Tong (jctong@ntu.edu.sg)
  Dao Hua Zhang (edhzhang@ntu.edu.sg)
- Funds：
- DOI：10.1038/s41377-021-00505-w
  CLC：
- Published：30 April 2021，
  
  Published Online：15 March 2021，
  
  Received：01 November 2020，
  
  Revised：24 February 2021，
  
  Accepted：01 March 2021
- Accepted：
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Tong, J. C. et al. Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection. Light: Science & Applications, 10, 600-609 (2021).
DOI：

Tong, J. C. et al. Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection. Light: Science & Applications, 10, 600-609 (2021). DOI： 10.1038/s41377-021-00505-w.

摘要

Abstract

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies

however

are plagued by low sensitivity

narrow spectral bandwidth

and complicated architecture. Here

we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer

strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces

which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10

-14

W Hz

-1/2

or a detectivity (

) of 2.7 × 10

cm Hz

1/2

-1

at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K

the corresponding NEP and

of the nanogroove device can be improved to 3.8 × 10

-15

W Hz

-1/2

and 1.6 × 10

cm Hz

1/2

-1

respectively. In addition

such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 µs and 780 ns are achieved at room temperature and 200 K

respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications

walk-through security

biological diagnosis

spectroscopy

and remote sensing. In addition

the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

关键词

Keywords

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