Highly efficient THz four-wave mixing in doped silicon

Nils Dessmann; Nguyen H. Le; Viktoria Eless; Steven Chick; Kamyar Saeedi; Alberto Perez-Delgado; Sergey G. Pavlov; Alexander F.G. van der Meer; Konstantin L. Litvinenko; Ian Galbraith; Nikolay V. Abrosimov; Helge Riemann; Carl R. Pidgeon; CarlR. AeppliGabriel; Britta Redlich; Benedict N. Murdin

doi:10.1038/s41377-021-00509-6

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Highly efficient THz four-wave mixing in doped silicon

Articles

- Highly efficient THz four-wave mixing in doped silicon
- Light: Science & Applications Vol. 10, Issue 5, Pages: 806-811(2021)
- Affiliations：
  
  1.Radboud University, Institute for Molecules and Materials, HFML-FELIX, Nijmegen, The Netherlands
  2.Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH, UK
  3.Institute of Optical Sensor Systems, German Aerospace Center, Berlin, Germany
  4.Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
  5.Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
  6.Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
  7.Institut de Physique, EPFL, 1015 Lausanne, Switzerland
  8.Paul Scherrer Institute, 5232 Villigen, Switzerland
- Author bio：
  
  Nils Dessmann (nils.dessmann@ru.nl)
  Nguyen H. Le (h.le@surrey.ac.uk)
- Funds：
- DOI：10.1038/s41377-021-00509-6
  CLC：
- Published：31 May 2021，
  
  Published Online：01 April 2021，
  
  Received：10 July 2020，
  
  Revised：02 March 2021，
  
  Accepted：10 March 2021
- Accepted：
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Dessmann, N. et al. Highly efficient THz four-wave mixing in doped silicon. Light: Science & Applications, 10, 806-811 (2021).
DOI：

Dessmann, N. et al. Highly efficient THz four-wave mixing in doped silicon. Light: Science & Applications, 10, 806-811 (2021). DOI： 10.1038/s41377-021-00509-6.

摘要

Abstract

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility

(3)

(where

represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser

we show that silicon doped with P or Bi has a value of

(3)

in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a

(3)

process)

and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

关键词

Keywords

references

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