Quantum-dot microlasers based on whispering gallery mode resonators

A. E. Zhukov; N. V. Kryzhanovskaya; E. I. Moiseev; M. V. Maximov

doi:10.1038/s41377-021-00525-6

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Quantum-dot microlasers based on whispering gallery mode resonators

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- Quantum-dot microlasers based on whispering gallery mode resonators
- Light: Science & Applications Vol. 10, Issue 5, Pages: 785-795(2021)
- Affiliations：
  
  1.Laboratory of quantum optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, St. Petersburg 194100, Russia
  2.Nanophotonics laboratory, Alferov University, Khlopina 8/3, St. Petersburg 194021, Russia
- Author bio：
  
  A. E. Zhukov (zhukale@gmail.com)
- Funds：
- DOI：10.1038/s41377-021-00525-6
  CLC：
- Published：31 May 2021，
  
  Published Online：15 April 2021，
  
  Received：14 December 2020，
  
  Revised：24 March 2021，
  
  Accepted：30 March 2021
- Accepted：
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Zhukov, A. E. et al. Quantum-dot microlasers based on whispering gallery mode resonators. Light: Science & Applications, 10, 785-795 (2021).
DOI：

Zhukov, A. E. et al. Quantum-dot microlasers based on whispering gallery mode resonators. Light: Science & Applications, 10, 785-795 (2021). DOI： 10.1038/s41377-021-00525-6.

摘要

Abstract

The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls

a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure

which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus

using conventional epitaxial structures and relatively simple post-growth processing methods

it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using Ⅲ-Ⅴ heterostructures grown on silicon.

关键词

Keywords

references

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