
1.International Center for Quantum Materials, School of Physics, Peking University, 100871 Beijing, China
2.State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, 510275 Guangzhou, Guangdong, China
3.Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
4.Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
5.State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, 300072 Tianjin, China
6.Songshan Lake Materials Laboratory, 523808 Dongguan, Guangdong, China
7.Collaborative Innovation Center of Quantum Matter, 100871 Beijing, China
Dong Sun (sundong@pku.edu.cn)
Published:30 June 2021,
Published Online:14 May 2021,
Received:19 February 2021,
Revised:22 April 2021,
Accepted:23 April 2021
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Zhuo, X. et al. Dynamical evolution of anisotropic response of type-Ⅱ Weyl semimetal TaIrTe4 under ultrafast photoexcitation. Light: Science & Applications, 10, 1053-1060 (2021).
Zhuo, X. et al. Dynamical evolution of anisotropic response of type-Ⅱ Weyl semimetal TaIrTe4 under ultrafast photoexcitation. Light: Science & Applications, 10, 1053-1060 (2021). DOI: 10.1038/s41377-021-00546-1.
Layered type-Ⅱ Weyl semimetals
such as WTe
2
MoTe
2
and TaIrTe
4
have been demonstrated as a supreme photodetection material with topologically enhanced responsivity and specific sensitivity to the orbital angular momentum of light. Toward future device applications with high performance and ultrafast response
it is necessary to understand the dynamical processes of hot carriers and transient electronic properties of these materials under photoexcitation. In this work
mid-infrared ultrafast spectroscopy is performed to study the dynamical evolution of the anisotropic response of TaIrTe
4
. The dynamical relaxation of photoexcited carriers exhibits three exponential decay components relating to optical/acoustic phonon cooling and subsequent heat transfer to the substrate. The ultrafast transient dynamics imply that TaIrTe
4
is an ideal material candidate for ultrafast optoelectronic applications
especially in the long-wavelength region. The angle-resolved measurement of transient reflection reveals that the reflectivity becomes less anisotropic in the quasi-equilibrium state
indicating a reduc
tion in the anisotropy of dynamical conductivity in presence of photoexcited hot carriers. The results are indispensable in material engineering for polarization-sensitive optoelectronics and high field electronics.
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