Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Jun Yin; Lian Liu; Yashu Zang; Anni Ying; Wenjie Hui; Shusen Jiang; Chunquan Zhang; Tzuyi Yang; Yu-Lun Chueh; Jing Li; Junyong Kang

doi:10.1038/s41377-021-00553-2

Go to Nature Website

Your Location：

Home >

Browse articles >

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Articles

- Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors
- Light: Science & Applications Vol. 10, Issue 6, Pages: 1133-1142(2021)
- Affiliations：
  
  1.Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen University, Xiamen 361005, China
  2.San'an Optoelectronics Co., Ltd., Xiamen 361005, China
  3.Department of Materials Science and Engineering, Tsing Hua University, Hsinchu 30013, China
- Author bio：
  
  Jun Yin (jyin@xmu.edu.cn)
  Jing Li (lijing@xmu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00553-2
  CLC：
- Published：30 June 2021，
  
  Published Online：31 May 2021，
  
  Received：07 December 2020，
  
  Revised：28 April 2021，
  
  Accepted：10 May 2021
- Accepted：
Scan QR Code
Yin, J. et al. Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors. Light: Science & Applications, 10, 1133-1142 (2021).
DOI：

Yin, J. et al. Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors. Light: Science & Applications, 10, 1133-1142 (2021). DOI： 10.1038/s41377-021-00553-2.

摘要

Abstract

Here

an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states

an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon

but also for the novel hot carries from graphene. As a result

significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically

at the reverse bias of −10 V

a 3.96-A W

−1

responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination

and a 1.03-A W

−1

responsivity with ~3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized

which are even remarkably higher than those in GIS devices with either Al

or the commonly employed SiO

insulation layers. This work demonstrates a universal strategy to fabricate broadband

low-cost and high-performance photo-detecting d

evices towards the graphene-silicon optoelectronic integration.

关键词

Keywords

references

Novoselov, K. S. et al. A roadmap for graphene.Nature490, 192–200 (2012)..

Mueller, T., Xia, F. N.&Avouris, P. Graphene photodetectors for high-speed optical communications.Nat. Photonics4, 297–301 (2010)..

Koppens, F. H. L. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems.Nat. Nanotechnol.9, 780–793 (2014)..

Liu, C. H. et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature.Nat. Nanotechnol.9, 273–278 (2014)..

Wang, X. M. et al. High-responsivity graphene/silicon-heterostructure waveguide photodetectors.Nat. Photonics7, 888–891 (2013)..

Chen, J. N. et al. Crystal organometal halide perovskites with promising optoelectronic applications.J. Mater. Chem. C4, 11–27 (2016)..

An, X. H. et al. Tunable graphene-silicon heterojunctions for ultrasensitive photodetection.Nano Lett.13, 909–916 (2013)..

Wang, W. H. et al. High-performance position-sensitive detector based on graphene–silicon heterojunction.Optica5, 27–31 (2018)..

Xie, C. et al. Graphene/semiconductor hybrid heterostructures for optoelectronic device applications.Nano Today19, 41–83 (2018)..

Goykhman, I. et al. On-chip integrated, silicon-graphene plasmonic schottky photodetector with high responsivity and avalanche photogain.Nano Lett.16, 3005–3013 (2016)..

Chen, C. C. et al. Graphene-silicon schottky diodes.Nano Lett.11, 1863–1867 (2011)..

Casalino, M. et al. Vertically illuminated, resonant cavity enhanced, graphene-silicon schottky photodetectors.ACS Nano11, 10955–10963 (2017)..

Chang, K. E. et al. Gate-controlled graphene–silicon schottky junction photodetector.Small14, 1801182 (2018)..

Sun, H. X. et al. Self-powered, flexible, and solution-processable perovskite photodetector based on low-cost carbon cloth.Small13, 1701042 (2017)..

Wan, X. et al. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?npj 2D Mater. Appl.1, 4 (2017)..

Shi, L.&Nihtianov, S. Comparative study of silicon-based ultraviolet photodetectors.IEEE Sens. J.12, 2453–2459 (2012)..

Wu, Z. Q. et al. Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector.Opt. Express23, 18864–18871 (2015)..

Tao, L. et al. Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity.npj 2D Mater. Appl.1, 19 (2017)..

Zhou, X. et al. Tunneling diode based on WSe2/SnS2heterostructure incorporating high detectivity and responsivity.Adv. Mater.30, 1703286 (2018)..

Zeng, L. H. et al. Bilayer graphene based surface passivation enhanced nano structured self-powered near-infrared photodetector.Opt. Express23, 4839–4846 (2015)..

Pak, Y. et al. Enhanced performance of MoS2photodetectors by inserting an ALD-processed TiO2interlayer.Small14, 1703176 (2018)..

Luo, L. B. et al. A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity.J. Mater. Chem. C3, 4723–4728 (2015)..

Wu, J. H. et al. The interaction between quantum dots and graphene: the applications in graphene-based solar cells and photodetectors.Adv. Funct. Mater.28, 1804712 (2018)..

Yu, X. C. et al. Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection.Nat. Commun.9, 4299 (2018)..

Levy, U. et al. Plasmonic silicon Schottky photodetectors: the physics behind graphene enhanced internal photoemission.APL Photonics2, 026103 (2017)..

Kumar, V., Nisika, N.&Kumar, M. Modified absorption and emission properties leading to intriguing applications in plasmonic–excitonic nanostructures.Adv. Optical Mater.9, 2001150 (2021)..

Hsu, B. C. et al. A PMOS tunneling photodetector.IEEE Trans. Electron Devices48, 1747–1749 (2001)..

Lin, C. H.&Liu, C. W. Metal-insulator-semiconductor photodetectors.Sensors10, 8797–8826 (2010)..

Park, H. K.&Choi, J. High responsivity and detectivity graphene-silicon majority carrier tunneling photodiodes with a thin native oxide layer.ACS Photonics5, 2895–2903 (2018)..

Zhu, M. et al. Schottky diode characteristics and 1/fnoise of high sensitivity reduced graphene oxide/Si heterojunction photodetector.J. Appl. Phys.119, 124303 (2016)..

Vul', A. Y.&Dideikin, A. T. Photodetectors based on metal-tunnel insulator-semiconductor structures.Sens. Actuators A: Phys.39, 7–18 (1993)..

Zhu, H. et al. Metal−oxide−semiconductor-structured MgZnO ultraviolet photodetector with high internal gain.J. Phys. Chem. C114, 7169–7172 (2010)..

Lee, M. L. et al. High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer.Opt. Express19, 12658–12663 (2011)..

Li, X. M. et al. High Detectivity graphene-silicon heterojunction photodetector.Small12, 595–601 (2016)..

Tauc, J. Optical properties and electronic structure of amorphous Ge and Si.Mater. Res. Bull.3, 37–46 (1968)..

Silveira, E. et al. AlN bandgap temperature dependence from its optical properties.J. Cryst. Growth310, 4007–4010 (2008)..

Sun, L. et al. Effects of post annealing treatments on the interfacial chemical properties and band alignment of AlN/Si structure prepared by atomic layer deposition.Nanoscale Res. Lett.12, 102 (2017)..

Kim, Y. et al. Effect of growth temperature on AlN thin films fabricated by atomic layer deposition.Ceram. Int.44, 17447–17452 (2018)..

Dahal, R. et al. AlN avalanche photodetectors.Appl. Phys. Lett.91, 243503 (2007)..

Shen, S. C. et al. Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD.IEEE Photonics Technol. Lett.19, 1744–1746 (2007)..

Lin, Y. K.&Hwu, J. G. Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode.IEEE Trans. Electron Devices61, 3217–3222 (2014)..

Dang, V. Q. et al. Ultrahigh responsivity in graphene-ZnO nanorod hybrid UV photodetector.Small11, 3054–3065 (2015)..

Zhao, B. et al. Solar-blind avalanche photodetector based on single ZnO-Ga2O3core-shell microwire.Nano Lett.15, 3988–3993 (2015)..

Stampfl, C.&Van de Walle, C. G. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride.Phys. Rev. B65, 155212 (2002)..

Miah, M. A. R., Niaz, I. A.&Lo, Y. H. Defect assisted carrier multiplication in amorphous silicon.IEEE J. Quantum Electron.56, 4000711 (2020)..

Tao, L. et al. Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al2O3dielectric.IEEE Electron Device Lett.39, 987–990 (2018)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰