Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Ye Yu; Tao Wang; Xiufang Chen; Lidong Zhang; Yang Wang; Yunfei Niu; Jiaqi Yu; Haotian Ma; Xiaomeng Li; Fang Liu; Gaoqiang Deng; Zhifeng Shi; Baolin Zhang; Xinqiang Wang; Yuantao Zhang

doi:10.1038/s41377-021-00560-3

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Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

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- Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes
- Light: Science & Applications Vol. 10, Issue 7, Pages: 1267-1274(2021)
- Affiliations：
  
  1.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China
  2.Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
  3.State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
  4.State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
  5.Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
- Author bio：
  
  Xiufang Chen (cxf@sdu.edu.cn)
  Yuantao Zhang (zhangyt@jlu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00560-3
  CLC：
- Published：31 July 2021，
  
  Published Online：03 June 2021，
  
  Received：07 February 2021，
  
  Revised：13 May 2021，
  
  Accepted：21 May 2021
- Accepted：
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Yu, Y. et al. Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes. Light: Science & Applications, 10, 1267-1274 (2021).
DOI：

Yu, Y. et al. Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes. Light: Science & Applications, 10, 1267-1274 (2021). DOI： 10.1038/s41377-021-00560-3.

摘要

Abstract

Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here

the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds

which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment

and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly

graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region

which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

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Keywords

references

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