MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Lingzhi Luo; Yixuan Huang; Keming Cheng; Abdullah Alhassan; Mahdi Alqahtani; Libin Tang; Zhiming Wang; Jiang Wu

doi:10.1038/s41377-021-00619-1

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MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Articles

- MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors
- Light: Science & Applications Vol. 10, Issue 10, Pages: 1829-1839(2021)
- Affiliations：
  
  1.Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China
  2.Materials Department, University of California, Santa Barbara, California, 93106, USA
  3.King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
  4.Kunming Institute of Physics, 650223, Kunming, Yunnan, China
  5.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, China
- Author bio：
  
  Jiang Wu (jiangwu@uestc.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00619-1
  CLC：
- Published：31 October 2021，
  
  Published Online：02 September 2021，
  
  Received：18 February 2021，
  
  Revised：15 August 2021，
  
  Accepted：18 August 2021
- Accepted：
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Luo, L. Z. et al. MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors. Light: Science & Applications, 10, 1829-1839 (2021).
DOI：

Luo, L. Z. et al. MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors. Light: Science & Applications, 10, 1829-1839 (2021). DOI： 10.1038/s41377-021-00619-1.

摘要

Abstract

A MXene-GaN-MXene based multiple quantum well photodetector was prepared on pattern

ed sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current

compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au–GaN–Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces

it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 10

Jones

respectively

making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.

关键词

Keywords

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