A monolithic InP/SOI platform for integrated photonics

Zhao Yan; Yu Han; Liying Lin; Ying Xue; Chao Ma; Wai Kit Ng; Kam Sing Wong; Kei May Lau

doi:10.1038/s41377-021-00636-0

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A monolithic InP/SOI platform for integrated photonics

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- A monolithic InP/SOI platform for integrated photonics
- Light: Science & Applications Vol. 10, Issue 11, Pages: 2143-2152(2021)
- Affiliations：
  
  1.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
  2.Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
- Author bio：
  
  Kei May Lau (eekmlau@ust.hk)
- Funds：
- DOI：10.1038/s41377-021-00636-0
  CLC：
- Published：30 November 2021，
  
  Published Online：26 September 2021，
  
  Received：14 April 2021，
  
  Revised：02 September 2021，
  
  Accepted：06 September 2021
- Accepted：
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Zhao, Y. et al. A monolithic InP/SOI platform for integrated photonics. Light: Science & Applications, 10, 2143-2152 (2021).
DOI：

Zhao, Y. et al. A monolithic InP/SOI platform for integrated photonics. Light: Science & Applications, 10, 2143-2152 (2021). DOI： 10.1038/s41377-021-00636-0.

摘要

Abstract

The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable

high-throughput

cost-effective

and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane

dislocation-free

site-controlled

intimately positioned with the Si device layer

and placed right on top of the buried oxide layer to form "InP-on-insulator". These attributes allow for the realization of various photonic functionalities using the epitaxial InP

with efficient light interfacing between the Ⅲ-Ⅴ devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires

square cavities

and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.

关键词

Keywords

references

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