Plasmon-induced trap filling at grain boundaries in perovskite solar cells

Kai Yao; Siqi Li; Zhiliang Liu; Yiran Ying; Petr Dvořák; Linfeng Fei; Tomáš Šikola; Haitao Huang; Peter Nordlander; Alex K.-Y. Jen; Dangyuan Lei

doi:10.1038/s41377-021-00662-y

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Plasmon-induced trap filling at grain boundaries in perovskite solar cells

Articles

- Plasmon-induced trap filling at grain boundaries in perovskite solar cells
- Light: Science & Applications Vol. 10, Issue 11, Pages: 2233-2244(2021)
- Affiliations：
  
  1.Institute of Photovoltaics/Department of Materials Science and Engineering, Nanchang University, Nanchang, 330031, China
  2.Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
  3.Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
  4.Institute of Physical Engineering, Brno University of Technology, Technická 2, Brno, 616 69, Czech Republic
  5.Laboratory for Nanophotonics, Department of Physics and Astronomy, Department of Electrical and Computer Engineering, Rice University, Houston, Texas, 77005, USA
- Author bio：
  
  Kai Yao (yaokai@ncu.edu.cn)
  Haitao Huang (aphhuang@polyu.edu.hk)
  Dangyuan Lei (dangylei@cityu.edu.hk)
- Funds：
- DOI：10.1038/s41377-021-00662-y
  CLC：
- Published：30 November 2021，
  
  Published Online：28 October 2021，
  
  Received：06 April 2021，
  
  Revised：08 October 2021，
  
  Accepted：12 October 2021
- Accepted：
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Yao, K. et al. Plasmon-induced trap filling at grain boundaries in perovskite solar cells. Light: Science & Applications, 10, 2233-2244 (2021).
DOI：

Yao, K. et al. Plasmon-induced trap filling at grain boundaries in perovskite solar cells. Light: Science & Applications, 10, 2233-2244 (2021). DOI： 10.1038/s41377-021-00662-y.

摘要

Abstract

The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic–inorganic halide perovskite (OIHP) films serve as major recombination centres

which limit the device performance. Herein

we incorporate specially designed poly(3-aminothiophenol)-coated gold (Au@PAT) nanoparticles into the perovskite absorber

in order to examine the influence of plasmonic resonance on carrier dynamics in perovskite solar cells. Local changes in the photophysical properties of the OIHP films reveal that plasmon excitation could fill trap sites at the GB region through photo-brightening

whereas transient absorption spectroscopy and density functional theory calculations correlate this photo-brightening of trap states with plasmon-induced interfacial processes. As a result

the device achieved the best efficiency of 22.0% with robust operational stability. Our work provides unambiguous evidence for plasmon-induced trap occupation in OIHP and reveals that plasmonic nanostructures may be one type of efficient additives to overcome the recombination losses in perovskite solar cells and thin-film solar cells in general.

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references

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