GeSnOI mid-infrared laser technology

Binbin Wang; Emilie Sakat; Etienne Herth; Maksym Gromovyi; Andjelika Bjelajac; Julien Chaste; Gilles Patriarche; Philippe Boucaud; Frédéric Boeuf; Nicolas Pauc; Vincent Calvo; Jérémie Chrétien; Marvin Frauenrath; Alexei Chelnokov; Vincent Reboud; Jean-Michel Hartmann; Moustafa El Kurdi

doi:10.1038/s41377-021-00675-7

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GeSnOI mid-infrared laser technology

Articles

- GeSnOI mid-infrared laser technology
- Light: Science & Applications Vol. 10, Issue 12, Pages: 2408-2420(2021)
- Affiliations：
  
  1.Université Paris-Saclay, CNRS, C2N, 10 boulevard Thomas Gobert, 91120 Palaiseau, France
  2.Université Côte d'Azur, CNRS, CRHEA, Rue Bernard Grégory, 06905 Sophia-Antipolis, France
  3.STMicroelectronics, Rue Jean Monnet, 38054 Crolles, France
  4.Université Grenoble Alpes, CEA, IRIG-DePhy, 17 rue des Martyrs, 38000 Grenoble, France
  5.Université Grenoble Alpes, CEA, Leti, 17 rue des Martyrs, 38000 Grenoble, France
- Author bio：
  
  Moustafa El Kurdi (moustafa.el-kurdi@c2n.upsaclay.fr)
- Funds：
- DOI：10.1038/s41377-021-00675-7
  CLC：
- Published：31 December 2021，
  
  Published Online：17 November 2021，
  
  Received：11 May 2021，
  
  Revised：25 October 2021，
  
  Accepted：29 October 2021
- Accepted：
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Wang, B. B. et al. GeSnOI mid-infrared laser technology. Light: Science & Applications, 10, 2408-2420 (2021).
DOI：

Wang, B. B. et al. GeSnOI mid-infrared laser technology. Light: Science & Applications, 10, 2408-2420 (2021). DOI： 10.1038/s41377-021-00675-7.

摘要

Abstract

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed

Sn alloying and tensile strain can tra

nsform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations

such as poor optical confinement

lack of strain

thermal

and defects management

all of which are poorly discussed in the literature. Herein

a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-Ⅳ semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI

after bonding a Ge

0.9

0.1

alloy layer grown on a Ge strain-relaxed-buffer

itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation

with up to 30% vertical out-coupling efficiency. As a result

the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

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references

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