Van der Waals two-color infrared photodetector

Peisong Wu; Lei Ye; Lei Tong; Peng Wang; Yang Wang; Hailu Wang; Haonan Ge; Zhen Wang; Yue Gu; Kun Zhang; Yiye Yu; Meng Peng; Fang Wang; Min Huang; Peng Zhou; Weida Hu

doi:10.1038/s41377-021-00694-4

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Van der Waals two-color infrared photodetector

Articles

- Van der Waals two-color infrared photodetector
- Light: Science & Applications Vol. 11, Issue 2, Pages: 179-187(2022)
- Affiliations：
  
  1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
  2.University of Chinese Academy of Sciences, Beijing, 100049, China
  3.Hubei Yangtze Memory Labs, School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430205, China
  4.State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Author bio：
  
  Peng Wang (w_peng@mail.sitp.ac.cn)
  Peng Zhou (pengzhou@fudan.edu.cn)
  Weida Hu (wdhu@mail.sitp.ac.cn)
- Funds：
- DOI：10.1038/s41377-021-00694-4
  CLC：
- Published：28 February 2022，
  
  Published Online：02 January 2022，
  
  Received：02 September 2021，
  
  Revised：25 November 2021，
  
  Accepted：02 December 2021
- Accepted：
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Wu, P. S. et al. Van der Waals two-color infrared photodetector. Light: Science & Applications, 11, 179-187 (2022).
DOI：

Wu, P. S. et al. Van der Waals two-color infrared photodetector. Light: Science & Applications, 11, 179-187 (2022). DOI： 10.1038/s41377-021-00694-4.

摘要

Abstract

With the increasing demand for multispectral information acquisition

infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However

the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here

we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer

which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (

*) of 6.4 × 10

cm Hz

1/2

−1

at 3.5 μm and room temperature

as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection.

关键词

Keywords

references

Rogalski, A., Antoszewski, J.&Faraone, L. Third-generation infrared photodetector arrays.J. Appl. Phys.105, 091101 (2009)..

Tang, X., Ackerman, M. M., Chen, M.&Guyot-Sionnest, P. Dual-band infrared imaging using stacked colloidal quantum dot photodiodes.Nat. Photon13, 277–282 (2019)..

Xiong, J.&Wu, S. -T. Planar liquid crystal polarization optics for augmented reality and virtual reality: from fundamentals to applications.eLight1, 3 (2021)..

Jin, Z. et al. Phyllotaxis-inspired nanosieves with multiplexed orbital angular momentum.eLight1, 5 (2021)..

Chang, X., Bian, L.&Zhang, J. Large-scale phase retrieval.eLight1, 4 (2021)..

Martyniuk, P., Antoszewski, J., Martyniuk, M., Faraone, L.&Rogalski, A. New concepts in infrared photodetector designs.Appl. Phys. Rev.1, 41102 (2014)..

Hu, W. et al. 128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk.Opt. Lett.39, 5184–5187 (2014)..

Campbell, J. C., Dentai, A. G., Lee, T. P.&Burrus, C. A. Improved 2-wavelength demultiplexing InGaAsP photodetector.IEEE J. Quantum Electron16, 601–603 (1980)..

Smith, E. P. G. et al. Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors.J. Electron. Mater.35, 1145–1152 (2006)..

Rajavel, R. D. et al. Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors.J. Electron. Mater.27, 747–751 (1998)..

Sarusi, G. QWIP or other alternative for third generation infrared systems.Infrared Phys. Technol.44, 439–444 (2003)..

Haddadi, A., Chevallier, R., Chen, G., Hoang, A. M.&Razeghi, M. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1-xSbxtype-II superlattices.Appl. Phys. Lett.106, 011104 (2015)..

Rogalski, A. HgCdTe infrared detector material: history, status and outlook.Rep. Prog. Phys.68, 2267–2336 (2005)..

Wang, Y. et al. Air-stable low-symmetry narrow-bandgap 2D sulfide niobium for polarization photodetection.Adv. Mater.32, 2005037 (2020)..

Tong, L. et al. Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature.Nat. Commun.11, 2308 (2020)..

Xia, F., Wang, H.&Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.Nat. Commun.5(6), 4458 (2014)..

Wang, Z. et al. Controllable Doping in 2D Layered Materials.Adv. Mater.33, 2104942 (2021)..

Liu, Y. et al. Van der Waals heterostructures and devices.Nat. Rev. Mater.1, 16042 (2016)..

Xia, F., Wang, H., Hwang, J. C. M., Neto, A. H. C.&Yang, L. Black phosphorus and its isoelectronic materials.Nat. Rev. Mater.1, 306–317 (2019)..

Jariwala, D., Marks, T. J.&Hersam, M. C. Mixed-dimensional van der Waals heterostructures.Nat. Mater.16, 170–181 (2017)..

Behura, S. K., Wang, C., Wen, Y.&Berry, V. Graphene-semiconductor heterojunction sheds light on emerging photovoltaics.Nat. Photon13, 312–318 (2019)..

Liu, Y., Huang, Y.&Duan, X. F. Van der Waals integration before and beyond two-dimensional materials.Nature567, 323–333 (2019)..

Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology.Nature573, 507–518 (2019)..

Chen, Z.&Segev, M. Highlighting photonics: looking into the next decade.eLight1, 2 (2021)..

Tong, L. et al. 2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware.Science373, 1353–1358 (2021)..

Miao, J. et al. Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces.Nano Lett.20, 2907–2915 (2020)..

Chhowalla, M., Jena, D.&Zhang, H. Two-dimensional semiconductors for transistors.Nat. Rev. Mater.1, 15 16052 (2016)..

Xiong, X. et al. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure.Nat. Electron.3, 106–112 (2020)..

Lee, C., Wei, X., Kysar, J. W.&Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene.Science321, 385–388 (2008)..

Bullock, J. et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature.Nat. Photon12, 601–607 (2018)..

Long, M. et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability.ACS Nano13, 2511–2519 (2019)..

Tan, C. et al. Evaporated SexTe1-xthin films with tunable bandgaps for short-wave infrared photodetectors.Adv. Mater.32, 2001329 (2020)..

Meng, P. et al. Blackbody sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition.Sci. Adv.7, eabf7358 (2021)..

Chen, Y. et al. Unipolar barrier photodetectors based on van der Waals heterostructures.Nat. Electron.4, 357–363 (2021)..

Wang, L. et al. One-dimensional electrical contact to a two-dimensional material.Science342, 614–617 (2013)..

Rogalski, A.Infrared detectors(CRC press, 2010).

Wang, P. et al. Arrayed van der Waals broadband detectors for dual-band detection.Adv. Mater.29, 1604439 (2017)..

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