Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

Tong Ye; Yongzhuo Li; Junze Li; Hongzhi Shen; Junwen Ren; Cun-Zheng Ning; Dehui Li

doi:10.1038/s41377-022-00718-7

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Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons

Articles

- Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons
- Light: Science & Applications Vol. 11, Issue 2, Pages: 221-229(2022)
- Affiliations：
  
  1.School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074 Wuhan, China
  2.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074 Wuhan, China
  3.Department of Electronic Engineering, Tsinghua University, 100084 Beijing, China
  4.Frontier Science Center for Quantum Information, 100084 Beijing, China
  5.School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
- Author bio：
  
  Dehui Li (dehuili@hust.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00718-7
  CLC：
- Published：28 February 2022，
  
  Published Online：24 January 2022，
  
  Received：03 August 2021，
  
  Revised：07 January 2022，
  
  Accepted：12 January 2022
- Accepted：
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Ye, T. et al. Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons. Light: Science & Applications, 11, 221-229 (2022).
DOI：

Ye, T. et al. Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons. Light: Science & Applications, 11, 221-229 (2022). DOI： 10.1038/s41377-022-00718-7.

摘要

Abstract

Long-lived interlayer excitons (IXs) in van der Waals heterostructures (HSs) stacked by monolayer transition metal dichalcogenides (TMDs) carry valley-polarized information and thus could find promising applications in valleytronic devices. Current manipulation approaches for valley polarization of IXs are mainly limited in electrical field/

doping

magnetic field or twist-angle engineering. Here

we demonstrate an electrochemical-doping method

which is efficient

in-situ and nonvolatile. We find the emission characteristics of IXs in WS

/WSe

HSs exhibit a large excitonic/valley-polarized hysteresis upon cyclic-voltage sweeping

which is ascribed to the chemical-doping of O

O redox couple trapped between WSe

and substrate. Taking advantage of the large hysteresis

a nonvolatile valley-addressable memory is successfully demonstrated. The valley-polarized information can be non-volatilely switched by electrical gating with retention time exceeding 60 min. These findings open up an avenue for nonvolatile valley-addressable memory and could stimulate more investigations on valleytronic devices.

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references

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