Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites

Shilin Jin; Renfu Li; Hai Huang; Naizhong Jiang; Jidong Lin; Shaoxiong Wang; Yuanhui Zheng; Xueyuan Chen; Daqin Chen

doi:10.1038/s41377-022-00739-2

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Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites

Articles

- Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites
- Light: Science & Applications Vol. 11, Issue 3, Pages: 383-395(2022)
- Affiliations：
  
  1.College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  2.Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
  3.CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
  4.Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, China
  5.Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou, 350117, China
  6.College of Chemistry, Fuzhou University, Fuzhou, 350116, China
- Author bio：
  
  Renfu Li (lirenfu@fjirsm.ac.cn)
  Xueyuan Chen (xchen@fjirsm.ac.cn)
  Daqin Chen (dqchen@fjnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00739-2
  CLC：
- Published：31 March 2022，
  
  Published Online：08 March 2022，
  
  Received：30 November 2021，
  
  Revised：10 February 2022，
  
  Accepted：13 February 2022
- Accepted：
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Jin, S. L. et al. Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites. Light: Science & Applications, 11, 383-395 (2022).
DOI：

Jin, S. L. et al. Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites. Light: Science & Applications, 11, 383-395 (2022). DOI： 10.1038/s41377-022-00739-2.

摘要

Abstract

Impurity doping is an effective approach to tuning the optoelectronic performance of host materials by imparting extrinsic electronic channels. Herein

a family of lanthanide (Ln

) ions was successfully incorporated into a Bi: Cs

AgInCl

lead-free double-perovskite (DP) semiconductor

expanding the spectral range from visible (Vis) to near-infrared (NIR) and improving the photoluminescence quantum yield (PLQY). After multidoping with Nd

Er and Tm

Bi/Ln: Cs

AgInCl

yielded an ultrabroadband continuous emission spectrum with a full width at half-maximum of ~365 nm originating from intrinsic self-trapped exciton recombination and abundant 4f-4f tra

nsitions of the Ln

dopants. Steady-state and transient-state spectra were used to ascertain the energy transfer and emissive processes. To avoid adverse energy interactions between the various Ln

ions in a single DP host

a heterogeneous architecture was designed to spatially confine different Ln

dopants via a "DP-in-glass composite" (DiG) structure. This bottom-up strategy endowed the prepared Ln

-doped DIG with a high PLQY of 40% (nearly three times as high as that of the multidoped DP) and superior long-term stability. Finally

a compact Vis-NIR ultrabroadband (400~2000 nm) light source was easily fabricated by coupling the DiG with a commercial UV LED chip

and this light source has promising applications in nondestructive spectroscopic analyses and multifunctional lighting.

关键词

Keywords

references

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