Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Jiaming Wang; Mingxing Wang; Fujun Xu; Baiyin Liu; Jing Lang; Na Zhang; Xiangning Kang; Zhixin Qin; Xuelin Yang; Xinqiang Wang; Weikun Ge; Bo Shen

doi:10.1038/s41377-022-00753-4

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Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Articles

- Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping
- Light: Science & Applications Vol. 11, Issue 4, Pages: 654-661(2022)
- Affiliations：
  
  1.State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871, Beijing, China
  2.Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, 100871, Beijing, China
  3.Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
- Author bio：
  
  Fujun Xu (fjxu@pku.edu.cn)
  Bo Shen (bshen@pku.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00753-4
  CLC：
- Published：30 April 2022，
  
  Published Online：24 March 2022，
  
  Received：02 September 2021，
  
  Revised：28 January 2022，
  
  Accepted：25 February 2022
- Accepted：
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Wang, J. M. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping. Light: Science & Applications, 11, 654-661 (2022).
DOI：

Wang, J. M. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping. Light: Science & Applications, 11, 654-661 (2022). DOI： 10.1038/s41377-022-00753-4.

摘要

Abstract

Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here

a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN

self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10

−3

is thus realized at room temperature

which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path

as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly

benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach

vertical miniband transport of holes is verified in the p-AlGaN superlattices

greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices

which exhibit a great improvement of the carrier injection efficiency and light extract

ion efficiency

thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN

and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

关键词

Keywords

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