Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Hongliang Chang; Zhetong Liu; Shenyuan Yang; Yaqi Gao; Jingyuan Shan; Bingyao Liu; Jingyu Sun; Zhaolong Chen; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Peng Gao; Jinmin Li; Zhongfan Liu; Tongbo Wei

doi:10.1038/s41377-022-00756-1

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Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

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- Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
- Light: Science & Applications Vol. 11, Issue 5, Pages: 808-819(2022)
- Affiliations：
  
  1.Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China
  3.Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, China
  4.Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
  5.Beijing graphene institute (BGI), 100095, Beijing, China
  6.Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, 100871, Beijing, China
  7.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
- Author bio：
  
  Peng Gao (p-gao@pku.edu.cn)
  Jinmin Li (jmli@semi.ac.cn)
  Zhongfan Liu (zfliu@pku.edu.cn)
  Tongbo Wei (tbwei@semi.ac.cn)
- Funds：
- DOI：10.1038/s41377-022-00756-1
  CLC：
- Published：31 May 2022，
  
  Published Online：07 April 2022，
  
  Received：12 January 2022，
  
  Revised：24 February 2022，
  
  Accepted：28 February 2022
- Accepted：
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Chang, H. L. et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light: Science & Applications, 11, 808-819 (2022).
DOI：

Chang, H. L. et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light: Science & Applications, 11, 808-819 (2022). DOI： 10.1038/s41377-022-00756-1.

摘要

Abstract

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy. In this work

we have prepared the strain-free AlN film with low dislocation density (DD) by graphene (Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals (QvdW) epitaxy is presented. The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process. Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode. Remarkably

it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch. Therefore

the low-strain state of the DUV light-emitting diode (DUV-LED) epitaxial structure is realized on the strain-free AlN template with Gr. Furthermore

the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire. An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.

关键词

Keywords

references

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