Suppressing thermal quenching via defect passivation for efficient quasi-2D perovskite light-emitting diodes

Dezhong Zhang; Yunxing Fu; Hongmei Zhan; Chenyang Zhao; Xiang Gao; Chuanjiang Qin; Lixiang Wang

doi:10.1038/s41377-022-00761-4

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Suppressing thermal quenching via defect passivation for efficient quasi-2D perovskite light-emitting diodes

Articles

- Suppressing thermal quenching via defect passivation for efficient quasi-2D perovskite light-emitting diodes
- Light: Science & Applications Vol. 11, Issue 4, Pages: 644-653(2022)
- Affiliations：
  
  1.State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
  2.School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
- Author bio：
  
  Chuanjiang Qin (cjqin@ciac.ac.cn)
- Funds：
- DOI：10.1038/s41377-022-00761-4
  CLC：
- Published：30 April 2022，
  
  Published Online：23 March 2022，
  
  Received：28 October 2021，
  
  Revised：24 February 2022，
  
  Accepted：03 March 2022
- Accepted：
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Zhang, D. Z.et al. Suppressing thermal quenching via defect passivation for efficient quasi-2D perovskite light-emitting diodes. Light: Science & Applications, 11, 644-653 (2022).
DOI：

Zhang, D. Z.et al. Suppressing thermal quenching via defect passivation for efficient quasi-2D perovskite light-emitting diodes. Light: Science & Applications, 11, 644-653 (2022). DOI： 10.1038/s41377-022-00761-4.

摘要

Abstract

Emission thermal quenching is commonly observed in quasi-2D perovskite emitters

which causes the severe drop in luminescence efficiency for the quasi-2D perovskite light-emitting diodes (PeLEDs) during practical operations. However

this issue is often neglected and rarely studied

and the root cause of the thermal quenching has not been completely revealed now. Here

we develop a passivation strategy via the 2

7-dibromo-9

9-bis (3′-diethoxylphosphorylpropyl)-fluorene to investigate and suppress the thermal quenching. The agent can effectively passivate coordination-unsaturated Pb

defects of both surface and bulk of the film without affecting the perovskite crystallization

which helps to more truly demonstrate the important role of defects in thermal quenching. And our results reveal the root cause that the quenching will be strengthened by the defect-promoted exciton-phonon coupling. Ultimately

the PeLEDs with defect passivation achieve an improved external quantum efficiency (EQE) over 22% and doubled operation lifetime at room temperature

and can maintain about 85% of the initial EQE at 85 ℃

much higher than 17% of the control device. These findings provide an important basis for fabricatin

g practical PeLEDs for lighting and displays.

关键词

Keywords

references

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