Atomic scale memristive photon source

Bojun Cheng; Till Zellweger; Konstantin Malchow; Xinzhi Zhang; Mila Lewerenz; Elias Passerini; Jan Aeschlimann; Ueli Koch; Mathieu Luisier; Alexandros Emboras; Alexandre Bouhelier; Juerg Leuthold

doi:10.1038/s41377-022-00766-z

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Atomic scale memristive photon source

Articles

- Atomic scale memristive photon source
- Light: Science & Applications Vol. 11, Issue 7, Pages: 1414-1422(2022)
- Affiliations：
  
  1.ETH Zurich, Institute of Electromagnetic Fields, Zurich 8092, Switzerland
  2.Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne Franche-Comté, Dijon 21078, France
  3.ETH Zurich, Integrated Systems Laboratory, Zurich 8092, Switzerland
- Author bio：
  
  Bojun Cheng (bojun.cheng@ief.ee.ethz.ch)
  Juerg Leuthold (leuthold@ethz.ch)
- Funds：
- DOI：10.1038/s41377-022-00766-z
  CLC：
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Cheng, B. J. et al. Atomic scale memristive photon source. Light: Science & Applications, 11, 1414-1422 (2022).
DOI：

Cheng, B. J. et al. Atomic scale memristive photon source. Light: Science & Applications, 11, 1414-1422 (2022). DOI： 10.1038/s41377-022-00766-z.

摘要

Abstract

Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms. They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing. Amongst these devices, Ag/amorphous-SiO,x,/Pt memristors are among the most studied systems, with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally. In this paper, we report the observation of a novel feature in these devices: The appearance of new photoluminescent centers in SiO,x, upon memristive switching, and photon emission correlated with the conductance changes. This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks, optical interconnects, and quantum communication.

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references

Z. P. Zhou , B. Yin , J. Michel . On-chip light sources for silicon photonics . Light Sci. Appl. , 2015 . 4 e358 .

C. Sun , 等 . Single-chip microprocessor that communicates directly using light . Nature , 2015 . 528 534 -538 . DOI:10.1038/nature16454http://doi.org/10.1038/nature16454.

P. Kozma , 等 . Integrated planar optical waveguide interferometer biosensors: a comparative review . Biosens. Bioelectron. , 2014 . 58 287 -307 . DOI:10.1016/j.bios.2014.02.049http://doi.org/10.1016/j.bios.2014.02.049.

A. Emboras , 等 . Atomic scale plasmonic switch . Nano Lett. , 2016 . 16 709 -714 . DOI:10.1021/acs.nanolett.5b04537http://doi.org/10.1021/acs.nanolett.5b04537.

H. B. Shen , 等 . Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency . Nat. Photonics , 2019 . 13 192 -197 . DOI:10.1038/s41566-019-0364-zhttp://doi.org/10.1038/s41566-019-0364-z.

Y. Shirasaki , 等 . Emergence of colloidal quantum-dot light-emitting technologies . Nat. Photonics , 2013 . 7 13 -23 . DOI:10.1038/nphoton.2012.328http://doi.org/10.1038/nphoton.2012.328.

P. Senellart , G. Solomon , A. White . High-performance semiconductor quantum-dot single-photon sources . Nat. Nanotechnol. , 2017 . 12 1026 -1039 . DOI:10.1038/nnano.2017.218http://doi.org/10.1038/nnano.2017.218.

M. Parzefall , 等 . Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions . Nat. Nanotechnol. , 2015 . 10 1058 -1063 . DOI:10.1038/nnano.2015.203http://doi.org/10.1038/nnano.2015.203.

J. Kern , 等 . Electrically driven optical antennas . Nat. Photonics , 2015 . 9 582 -586 . DOI:10.1038/nphoton.2015.141http://doi.org/10.1038/nphoton.2015.141.

H. L. Qian , 等 . Efficient light generation from enhanced inelastic electron tunnelling . Nat. Photonics , 2018 . 12 485 -488 . DOI:10.1038/s41566-018-0216-2http://doi.org/10.1038/s41566-018-0216-2.

A. V. Uskov , 等 . Excitation of plasmonic nanoantennas by nonresonant and resonant electron tunnelling . Nanoscale , 2016 . 8 14573 -14579 . DOI:10.1039/C6NR01931Ehttp://doi.org/10.1039/C6NR01931E.

D. B. Strukov , 等 . The missing memristor found . Nature , 2008 . 453 80 -83 . DOI:10.1038/nature06932http://doi.org/10.1038/nature06932.

R. Waser , M. Aono . Nanoionics-based resistive switching memories . Nat. Mater. , 2007 . 6 833 -840 . DOI:10.1038/nmat2023http://doi.org/10.1038/nmat2023.

S. Menzel , 等 . Switching kinetics of electrochemical metallization memory cells . Phys. Chem. Chem. Phys. , 2013 . 15 6945 -6952 . DOI:10.1039/c3cp50738fhttp://doi.org/10.1039/c3cp50738f.

T. Hasegawa , 等 . Atom/ion movement controlled devices for beyond Von‐Neumann computers . Adv. Mater. , 2012 . 24 252 -267 . DOI:10.1002/adma.201102597http://doi.org/10.1002/adma.201102597.

B. J. Cheng , 等 . Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching . Commun. Phys. , 2019 . 2 28 DOI:10.1038/s42005-019-0125-9http://doi.org/10.1038/s42005-019-0125-9.

K. H. Kim , 等 . A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications . Nano Lett. , 2012 . 12 389 -395 . DOI:10.1021/nl203687nhttp://doi.org/10.1021/nl203687n.

Z. R. Wang , 等 . Resistive switching materials for information processing . Nat. Rev. Mater. , 2020 . 5 173 -195 . DOI:10.1038/s41578-019-0159-3http://doi.org/10.1038/s41578-019-0159-3.

A. Emboras , 等 . Atomic scale photodetection enabled by a memristive junction . ACS Nano , 2018 . 12 6706 -6713 . DOI:10.1021/acsnano.8b01811http://doi.org/10.1021/acsnano.8b01811.

Y. B. Zhu , 等 . Light-emitting memristors for optoelectronic artificial efferent nerve . Nano Lett. , 2021 . 21 6087 -6904 . DOI:10.1021/acs.nanolett.1c01482http://doi.org/10.1021/acs.nanolett.1c01482.

M. Lanza , 等 . Recommended methods to study resistive switching devices . Adv. Electron. Mater. , 2019 . 5 1800143 DOI:10.1002/aelm.201800143http://doi.org/10.1002/aelm.201800143.

B. J. Cheng , 等 . Threshold switching enabled sub-pW-leakage, hysteresis-free circuits . IEEE Trans. Electron Devices , 2021 . 68 3112 -3118 . DOI:10.1109/TED.2021.3075393http://doi.org/10.1109/TED.2021.3075393.

L. J. Cui , 等 . Thousand-fold increase in plasmonic light emission via combined electronic and optical excitations . Nano Lett. , 2021 . 21 2658 -2665 . DOI:10.1021/acs.nanolett.1c00503http://doi.org/10.1021/acs.nanolett.1c00503.

T. Tsuruoka , 等 . Forming and switching mechanisms of a cation-migration-based oxide resistive memory . Nanotechnology , 2010 . 21 425205 DOI:10.1088/0957-4484/21/42/425205http://doi.org/10.1088/0957-4484/21/42/425205.

T. H. Lee , J. I. Gonzalez , R. M. Dickson . Strongly enhanced field-dependent single-molecule electroluminescence . Proc. Natl Acad. Sci. USA , 2002 . 99 10272 -10275 . DOI:10.1073/pnas.162356799http://doi.org/10.1073/pnas.162356799.

Menzel, S. & Waser, R. Mechanism of memristive switching in OxRAM. In: Advances in Non-Volatile Memory and Storage Technology 2nd edn (eds Magyari-Köpe, B. & Nishi, Y. ) (Amsterdam: Elsevier, 2019).

A. Mehonic , 等 . Nanoscale transformations in metastable, amorphous, silicon‐rich silica . Adv. Mater. , 2016 . 28 7486 -7493 . DOI:10.1002/adma.201601208http://doi.org/10.1002/adma.201601208.

E. Nadimi , 等 . Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: an ab Initio investigation . IEEE Electron Device Lett. , 2010 . 31 881 -883 . DOI:10.1109/LED.2010.2051013http://doi.org/10.1109/LED.2010.2051013.

A. Padovani , 等 . A microscopic mechanism of dielectric breakdown in SiO2 films: an insight from multi-scale modeling . J. Appl. Phys. , 2017 . 121 155101 DOI:10.1063/1.4979915http://doi.org/10.1063/1.4979915.

Y. F. Wang , 等 . Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model . Appl. Phys. Lett. , 2013 . 102 042103 DOI:10.1063/1.4776695http://doi.org/10.1063/1.4776695.

A. O'Hara , G. Bersuker , A. A. Demkov . Assessing hafnium on hafnia as an oxygen getter . J. Appl. Phys. , 2014 . 115 183703 DOI:10.1063/1.4876262http://doi.org/10.1063/1.4876262.

X. Huang , 等 . Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures . Appl. Phys. Lett. , 2018 . 113 112103 DOI:10.1063/1.5047925http://doi.org/10.1063/1.5047925.

D. Z. Gao , A. M. El-Sayed , A. L. Shluger . A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection . Nanotechnology , 2016 . 27 505207 DOI:10.1088/0957-4484/27/50/505207http://doi.org/10.1088/0957-4484/27/50/505207.

R. Ichihara , 等 . Investigation of switching-induced local defects in oxide-based CBRAM using expanded analytical model of TDDB . IEEE Trans. Electron Devices , 2019 . 66 2165 -2171 . DOI:10.1109/TED.2019.2904984http://doi.org/10.1109/TED.2019.2904984.

Salh, R. Defect related luminescence in silicon dioxide network: a review. In Crystalline Silicon-Properties and Uses (ed Basu, S. ) 135–172 (Rijeka: IntechOpen, 2011).

A. Meldrum , 等 . Photoluminescence in the silicon-oxygen system . J. Vac. Sci. Technol. A Vac. Surf. Films , 2006 . 24 713 -717 . DOI:10.1116/1.2162563http://doi.org/10.1116/1.2162563.

J. A. Rodríguez , 等 . Emission mechanisms of Si nanocrystals and defects in SiO2 materials . J. Nanomaterials , 2014 . 2014 409482 .

Z. Y. Ni , 等 . Silicon nanocrystals: unfading silicon materials for optoelectronics . Mater. Sci. Eng. R Rep. , 2019 . 138 85 -117 . DOI:10.1016/j.mser.2019.06.001http://doi.org/10.1016/j.mser.2019.06.001.

C. L. He , 等 . Tunable electroluminescence in planar graphene/SiO2 memristors . Adv. Mater. , 2013 . 25 5593 -5598 . DOI:10.1002/adma.201302447http://doi.org/10.1002/adma.201302447.

T. Anutgan , 等 . Electroformed silicon nitride based light emitting memory device . Appl. Phys. Lett. , 2017 . 111 053502 DOI:10.1063/1.4997029http://doi.org/10.1063/1.4997029.

Y. Kanemitsu . Luminescence properties of nanometer-sized Si crystallites: core and surface states . Phys. Rev. B , 1994 . 49 16845 -16848 . DOI:10.1103/PhysRevB.49.16845http://doi.org/10.1103/PhysRevB.49.16845.

S. Roy , 等 . Fluorescence lifetime analysis and fluorescence correlation spectroscopy elucidate the internal architecture of fluorescent silica nanoparticles . Langmuir , 2010 . 26 13741 -13746 . DOI:10.1021/la101929thttp://doi.org/10.1021/la101929t.

J. Yao , 等 . In situ imaging of the conducting filament in a silicon oxide resistive switch . Sci. Rep. , 2012 . 2 242 DOI:10.1038/srep00242http://doi.org/10.1038/srep00242.

M. Aceves-Mijares , 等 . On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition . J. Nanomaterials , 2012 . 2012 5 .

López-Estopier, R., Aceves-Mijares, M. & Falcony, C. Cathodo-and photo-luminescence of silicon rich oxide films obtained by LPCVD. In Cathodoluminescence (ed Yamamoto, N. ) 253–272 (Rijeka: IntechOpen, 2012).

J. P. Wilcoxon , G. A. Samara , P. N. Provencio . Optical and electronic properties of Si nanoclusters synthesized in inverse micelles . Phys. Rev. B , 1999 . 60 2704 -2714 . DOI:10.1103/PhysRevB.60.2704http://doi.org/10.1103/PhysRevB.60.2704.

K. Dohnalová , 等 . White-emitting oxidized silicon nanocrystals: discontinuity in spectral development with reducing size . J. Appl. Phys. , 2010 . 107 053102 DOI:10.1063/1.3289719http://doi.org/10.1063/1.3289719.

T. H. Lee , R. M. Dickson . Discrete two-terminal single nanocluster quantum optoelectronic logic operations at room temperature . Proc. Natl Acad. Sci. USA , 2003 . 100 3043 -3046 . DOI:10.1073/pnas.0635474100http://doi.org/10.1073/pnas.0635474100.

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