Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure

Zhuofei Gan; Hongtao Feng; Liyang Chen; Siyi Min; Chuwei Liang; Menghong Xu; Zijie Jiang; Zhao Sun; Chuying Sun; Dehu Cui; Wen-Di Li

doi:10.1038/s41377-022-00774-z

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Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure

Articles

- Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure
- Light: Science & Applications Vol. 11, Issue 5, Pages: 832-841(2022)
- Affiliations：
  
  1.Department of Mechanical Engineering, University of Hong Kong, Hong Kong, China
  2.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
- Author bio：
  
  Wen-Di Li (liwd@hku.hk)
- Funds：
- DOI：10.1038/s41377-022-00774-z
  CLC：
- Published：31 May 2022，
  
  Published Online：08 April 2022，
  
  Received：24 October 2021，
  
  Revised：16 March 2022，
  
  Accepted：21 March 2022
- Accepted：
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Gan, Z. F. et al. Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure. Light: Science & Applications, 11, 832-841 (2022).
DOI：

Gan, Z. F. et al. Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure. Light: Science & Applications, 11, 832-841 (2022). DOI： 10.1038/s41377-022-00774-z.

摘要

Abstract

Functional nanostructures are exploited for a variety of cutting-edge fields including plasmonics

metasurfaces

and biosensors

just to name a few. Some applications require nanostructures with uniform feature sizes while others rely on spatially varying morphologies. However

fine manipulation of the feature size over a large area remains a substantial challenge because mainstream approaches to precise nanopatterning are based on low-throughput pixel-by-pixel processing

such as those utilizing focused beams of photons

electrons

or ions. In this work

we provide a solution toward wafer-scale

arbitrary modulation of feature size distribution by introducing a lithographic portfolio combining interference lithography (IL) and grayscale-patterned secondary exposure (SE). Employed after the high-throughput IL

a SE with patterned intensity distribution spatially modulates the dimensions of photoresist nanostructures. Based on this approach

we successfully fabricated 4-inch wafer-scale nanogratings with uniform linewidths of < 5% variation

using grayscale-patterned SE to compensate for the linewidth difference caused by the Gaussian distribution of the laser beams in the IL. Besides

we also demonstrated a wafer-scale structural color painting by spatially modulating the filling ratio to achieve gradient grayscale color using SE.

关键词

Keywords

references

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