Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Ruijuan Tian; Xuetao Gan; Chen Li; Xiaoqing Chen; Siqi Hu; Linpeng Gu; Dries Van Thourhout; Andres Castellanos-Gomez; Zhipei Sun; Jianlin Zhao

doi:10.1038/s41377-022-00784-x

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Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Articles

- Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity
- Light: Science & Applications Vol. 11, Issue 5, Pages: 901-910(2022)
- Affiliations：
  
  1.Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129 Xi'an, China
  2.Photonics Research Group and Center for Nano and Biophotonics, Ghent University, B-9000 Gent, Belgium
  3.Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
  4.Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, FI-02150 Espoo, Finland
- Author bio：
  
  Xuetao Gan (xuetaogan@nwpu.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00784-x
  CLC：
- Published：31 May 2022，
  
  Published Online：20 April 2022，
  
  Received：07 August 2021，
  
  Revised：18 March 2022，
  
  Accepted：31 March 2022
- Accepted：
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Tian, R. J. et al. Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity. Light: Science & Applications, 11, 901-910 (2022).
DOI：

Tian, R. J. et al. Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity. Light: Science & Applications, 11, 901-910 (2022). DOI： 10.1038/s41377-022-00784-x.

摘要

Abstract

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However

the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal

suffering from high dark currents and low responsivities at high operation speed. Here

we report a van der Waals PN heterojunction photodetector

composed of p-type black phosphorous and n-type molybdenum telluride

integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous

the dark current is lower than 7 nA

which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA W

−1

is obtained. Remarkably

the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection

enabling an increased responsivity of 709 mA W

−1

. Besides

the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection ov

er a wide spectral range

as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current

high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon

lithium niobate

polymer

etc.

关键词

Keywords

references

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