Material-specific high-resolution table-top extreme ultraviolet microscopy

Wilhelm Eschen; Lars Loetgering; Vittoria Schuster; Robert Klas; Alexander Kirsche; Lutz Berthold; Michael Steinert; Thomas Pertsch; Herbert Gross; Michael Krause; Jens Limpert; Jan Rothhardt

doi:10.1038/s41377-022-00797-6

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Material-specific high-resolution table-top extreme ultraviolet microscopy

Articles

- Material-specific high-resolution table-top extreme ultraviolet microscopy
- Light: Science & Applications Vol. 11, Issue 5, Pages: 991-1000(2022)
- Affiliations：
  
  1.Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, Albert-Einstein-Str. 15, 07745, Jena, Germany
  2.Helmholtz-Institute Jena, Fröbelstieg 3, 07743, Jena, Germany
  3.Leibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745, Jena, Germany
  4.Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Walter-Hülse-Str. 1, 06120, Halle, Germany
  5.Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745, Jena, Germany
- Author bio：
  
  Wilhelm Eschen (wilhelm.eschen@uni-jena.de)
- Funds：
- DOI：10.1038/s41377-022-00797-6
  CLC：
- Published：31 May 2022，
  
  Published Online：29 April 2022，
  
  Received：18 January 2022，
  
  Revised：07 April 2022，
  
  Accepted：11 April 2022
- Accepted：
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Eschen, W. et al. Material-specific high-resolution table-top extreme ultraviolet microscopy. Light: Science & Applications, 11, 991-1000 (2022).
DOI：

Eschen, W. et al. Material-specific high-resolution table-top extreme ultraviolet microscopy. Light: Science & Applications, 11, 991-1000 (2022). DOI： 10.1038/s41377-022-00797-6.

摘要

Abstract

Microscopy with extreme ultraviolet (EUV) radiation holds promise for high-resolution imaging with excellent material contrast

due to the short wavelength and numerous element-specific absorption edges available in this spectral range. At the same time

EUV radiation has significantly larger penetration depths than electrons. It thus enables a nano-scale view into complex three-dimensional structures that are important for material science

semiconductor metrology

and next-generation nano-devices. Here

we present high-resolution and material-specific microscopy at 13.5 nm wavelength. We combine a highly stable

high photon-flux

table-top EUV source with an interferometrically stabilized ptychography setup. By utilizing structured EUV illumination

we overcome the limitations of conventional EUV focusing optics and demonstrate high-resolution microscopy at a half-pitch lateral resolution of 16 nm. Moreover

we propose mixed-state orthogonal probe relaxation ptychography

enabling robust phase-contrast imaging over wide fields of view and long acquisition times. In this way

the complex transmission of an integrated circuit is precisely reconstructed

allowing for the classification of the material composition of mesoscopic semiconductor systems.

关键词

Keywords

references

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