Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Johann Stachurski; Sebastian Tamariz; Gordon Callsen; Raphaël Butté; Nicolas Grandjean

doi:10.1038/s41377-022-00799-4

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Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Review

- Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
- Light: Science & Applications Vol. 11, Issue 5, Pages: 751-765(2022)
- Affiliations：
  
  1.Institute of Physics, École Polytechnique Fédérale de Lausanne, EPFL, CH-1015, Lausanne, Switzerland
  2.Present address: Université Côte d'Azur, CNRS, CRHEA, F-06560, Valbonne, France
  3.Present address: Institut für Festkörperphysik, Universität Bremen, 28359 Bremen, Germany
- Author bio：
  
  Johann Stachurski (johann.stachurski@epfl.ch)
- Funds：
- DOI：10.1038/s41377-022-00799-4
  CLC：
- Published：31 May 2022，
  
  Published Online：28 April 2022，
  
  Received：17 November 2021，
  
  Revised：04 April 2022，
  
  Accepted：13 April 2022
- Accepted：
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Stachurski, J. et al. Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots. Light: Science & Applications, 11, 751-765 (2022).
DOI：

Stachurski, J. et al. Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots. Light: Science & Applications, 11, 751-765 (2022). DOI： 10.1038/s41377-022-00799-4.

摘要

Abstract

Ⅲ-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here

we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300 K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of

(2)

(0) = 0.05 ± 0.02 at 5 K and 0.17 ± 0.08 at 300 K. We complement this study with temperature dependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports

we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination

TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component

we first discard the interplay of dark-to-bright state refilling in the exciton

recombination process. Besides

this temperature-invariance also highlights the absence of nonradiative exciton recombinations

a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300 K. Overall

our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.

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Keywords

references

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