
1.Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129 Xi'an, China
2.Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072 Xi'an, China
3.Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
4.State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083 Shanghai, China
5.University of Chinese Academy of Sciences, 19 Yuquan Road, 100049 Beijing, China
6.School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, 201210 Shanghai, China
7.ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
Xutao Zhang (xtzhang@nwpu.edu.cn)
Xuetao Gan (xuetaogan@nwpu.edu.cn)
Published:30 June 2022,
Published Online:29 April 2022,
Received:03 December 2021,
Revised:17 April 2022,
Accepted:18 April 2022
Scan QR Code
Yi, R. X. et al. Self-frequency-conversion nanowire lasers. Light: Science & Applications, 11, 1109-1117 (2022).
Yi, R. X. et al. Self-frequency-conversion nanowire lasers. Light: Science & Applications, 11, 1109-1117 (2022). DOI: 10.1038/s41377-022-00807-7.
Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration
ultraco
mpact footprint
and low energy consumption. Here
we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths
as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In
0.16
Ga
0.84
As core/shell NW lasing at 1016 nm
an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation
as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths
multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers
even to the deep ultraviolet and THz range.
Duan, X. F. et al. Single-nanowire electrically driven lasers.Nature421, 241–245 (2003)..
Jevtics, D. et al. Integration of semiconductor nanowire lasers with polymeric waveguide devices on a mechanically flexible substrate.Nano Lett.17, 5990–5994 (2017)..
Saxena, D. et al. Optically pumped room-temperature GaAs nanowire lasers.Nat. Photonics7, 963–968 (2013)..
Zhuang, X. J. et al. Multicolor semiconductor lasers.Adv. Optical Mater.7, 1900071 (2019)..
Mayer, B. et al. Monolithically integrated high-β nanowire lasers on silicon.Nano Lett.16, 152–156 (2016)..
Kim, H. et al. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature.Nano Lett.17, 3465–3470 (2017)..
Yuan, X. M. et al. Selective area epitaxy of III-V nanostructure arrays and networks: growth, applications, and future directions.Appl. Phys. Rev.8, 021302 (2021)..
Huang, M. H. et al. Room-temperature ultraviolet nanowire nanolasers.Science292, 1897–1899 (2001)..
Liu, Z. C. et al. Dynamical color-controllable lasing with extremely wide tuning range from red to green in a single alloy nanowire using nanoscale manipulation.Nano Lett.13, 4945–4950 (2013)..
Qian, F. et al. Multi-quantum-wellnanowire heterostructures for wavelength-controlled lasers.Nat. Mater.7, 701–706 (2008)..
Zhang, G. Q. et al. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.Sci. Adv.5, eaat8896 (2019)..
Fan, F. et al. Mid-infrared lasing in lead sulfide subwavelength wires on silicon.Nano Lett.20, 470–477 (2020)..
Zhu, H. M. et al. Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors.Nat. Mater.14, 636–642 (2015)..
Wang, X. X. et al. High-quality in-plane aligned CsPbX3perovskite nanowire lasers with composition-dependent strong exciton-photon coupling.ACS Nano12, 6170–6178 (2018)..
Chen, S. L. et al. Near-infrared lasing at 1 μm from a dilute-nitride-based multishell nanowire.Nano Lett.19, 885–890 (2019)..
Ren, D. D. et al. Single-mode near-infrared lasing in a GaAsSb-based nanowire superlattice at room temperature.Nano Lett.18, 2304–2310 (2018)..
Tatebayashi, J. et al. Room-temperature lasing in a single nanowire with quantum dots.Nat. Photonics9, 501–505 (2015)..
Zhang, F. L. et al. A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications.Adv. Funct. Mater.32, 2103057 (2022)..
Zhang, X. T. et al. Ultralow threshold, single-mode InGaAs/GaAs multiquantum disk nanowire lasers.ACS Nano15, 9126–9133 (2021)..
Scofield, A. C. et al. Bottom-up photonic crystal lasers.Nano Lett.11, 5387–5390 (2011)..
Kim, H. et al. Room-temperature InGaAs nanowire array band-edge lasers on patterned silicon-on-insulator platforms.Phys. Status Solidi Rapid Res. Lett.13, 1800489 (2019)..
Khan, A. Laser diodes go green.Nat. Photonics3, 432–434 (2009)..
Boyd, R. W.Nonlinear Opticsm, 4th edn. (Academic Press, 2020).
Chen, R. et al. Second-harmonic generation from a single wurtzite GaAs nanoneedle.Appl. Phys. Lett.96, 051110 (2010)..
Wang, F. et al. Nonlinear optical processes in optically trapped InP nanowires.Nano Lett.11, 4149–4153 (2011)..
Ren, M. L. et al. Crystallographic characterization of II-VI semiconducting nanostructures via optical second harmonic generation.Nano Lett.15, 7341–7346 (2015)..
Xin, C. G. et al. Single CdTe nanowire optical correlator for femtojoule pulses.Nano Lett.16, 4807–4810 (2016)..
Chen, S. L. et al. Dilute nitride nanowire lasers based on a GaAs/GaNAs core/shell structure.Nano Lett.17, 1775–1781 (2017)..
Jiang, N.Growth and characterisation of GaAs/AlGaAs core-shell nanowires for optoelectronic device applications. PhD thesis, The Australian National University, Australian, 2016.
Saxena, D. et al. Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers.Nano Lett.16, 5080–5086 (2016)..
van Vugt, L. K., Rühle, S.&Vanmaekelbergh, D. Phase-correlated nondirectional laser emission from the end facets of a ZnO nanowire.Nano Lett.6, 2707–2711 (2006)..
Ning, C. Z. Semiconductor nanolasers.Phys. Status Solidi B247, 774–788 (2010)..
Maslov, A. V.&Ning, C. Z. Reflection of guided modes in a semiconductor nanowire laser.Appl. Phys. Lett.83, 1237–1239 (2003)..
Saxena, D. et al. Mode profiling of semiconductor nanowire lasers.Nano Lett.15, 5342–5348 (2015)..
Shen, Y. R.The Principles of Nonlinear Optics. (John Wiley&Sons, 1984).
Palik, E. D.Handbook of Optical Constants of Solids Volume III. (Academic Press, 1998).
Oulton, R. F. et al. A hybrid plasmonic waveguide for subwavelength confinement and long-range propagation.Nat. Photonics2, 496–500 (2008)..
Oulton, R. F. et al. Plasmon lasers at deep subwavelength scale.Nature461, 629–632 (2009)..
0
Views
1
Downloads
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution
京公网安备11010802024621