An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

Fan Zhang; Jose F. Castaneda; Timothy H. Gfroerer; Daniel Friedman; Yong-Hang Zhang; Mark W. Wanlass; Yong Zhang

doi:10.1038/s41377-022-00833-5

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An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

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- An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
- Light: Science & Applications Vol. 11, Issue 6, Pages: 1206-1217(2022)
- Affiliations：
  
  1.Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte, Charlotte, NC 28223, USA
  2.Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  3.Department of Physics, Davidson College, Davidson, NC 28035, USA
  4.National Renewable Energy Laboratory, Golden, CO 80401, USA
  5.School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
  6.Wanlass Consulting, Norwood, CO 81423, USA
- Author bio：
  
  Yong Zhang (yong.zhang@uncc.edu)
- Funds：
- DOI：10.1038/s41377-022-00833-5
  CLC：
- Published：30 June 2022，
  
  Published Online：13 May 2022，
  
  Received：12 November 2021，
  
  Revised：21 April 2022，
  
  Accepted：29 April 2022
- Accepted：
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Zhang, F. et al. An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures. Light: Science & Applications, 11, 1206-1217 (2022).
DOI：

Zhang, F. et al. An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures. Light: Science & Applications, 11, 1206-1217 (2022). DOI： 10.1038/s41377-022-00833-5.

摘要

Abstract

We demonstrate an

all optical

approach that can surprisingly offer the possibility of yielding much more information than one would expect

pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction

and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g.

5–6 orders in magnitude)

in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode

nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (I

QE)

minority and majority carrier density

inter-band radiative recombination rate (

)

minority carrier nonradiative recombination rate (

)

defect center occupation fraction (

)

defect center density (

)

and minority and majority carrier capture cross-sections (

and

). While some of this information is thought to be obtainable optically

such as IQE and the

ratio

most of the other parameters are generally considered to be attainable only through electrical techniques

such as current-voltage (I-V) characteristics and deep level transient spectroscopy (DLTS). Following a procedure developed herein

this approach has been successfully applied to three GaAs double-heterostructures that exhibit two distinctly different nonradiative recombination characteristics. The method greatly enhances the usefulness of the simple PL technique to an unprecedented level

facilitating comprehensive material and device characterization without the need for any device processing.

关键词

Keywords

references

Kittel, C.Introduction to Solid State Physics8th edn (John Wiley&Sons, Inc, 2005).

Henry, C. H.&Lang, D. V. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP.Phys. Rev. B15, 989–1016 (1977)..

Gfroerer, T. H.Photoluminescence in analysis of surfaces and interfaces. InEncyclopedia of Analytical Chemistry: Applications, Theory and Instrumentation(ed Meyers, R. A. and G.E. McGuire) (Wiley, 2006)..

Topaz, A. et al. Using the excitation-dependent radiative efficiency to assess asymmetry in the defect-related density of states.Appl. Phys. Lett.90, 092110 (2007)..

Zhang, F. et al. Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs.Mater. Today36, 18–29 (2020)..

Hu, C. K. et al. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering.Light. Sci. Appl.7, 23 (2018)..

Chuang, S. L.Physics of Photonic Devices(John Wiley&Sons, Inc, 2009).

Dai, Q. et al. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities.Appl. Phys. Lett.94, 111109 (2009)..

Cho, J., Schubert, E. F.&Kim, J. K. Efficiency droop in light-emitting diodes: challenges and countermeasures.Laser Photonics Rev.7, 408–421 (2013)..

Wang, J. B. et al. Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy.Phys. Status Solidi (B)244, 2740–2751 (2007)..

Ding, Y. J. et al. Characterization of recombination processes in multiple narrow asymmetric coupled quantum wells based on the dependence of photoluminescence on laser intensity.Appl. Phys. Lett.60, 2051–2053 (1992)..

Shockley, W.&Read, W. T. Jr Statistics of the recombinations of holes and electrons.Phys. Rev.87, 835–842 (1952)..

Hall, R. N. Electron-hole recombination in germanium.Phys. Rev.87, 387 (1952)..

Gfroerer, T. H., Zhang, Y.&Wanlass, M. W. An extended defect as a sensor for free carrier diffusion in a semiconductor.Appl. Phys. Lett.102, 012114 (2013)..

Lin, Y. et al. Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes.Appl. Phys. Lett.101, 252103 (2012)..

Mooradian, A.&Wright, G. B. Observation of the interaction of plasmons with longitudinal optical phonons in GaAs.Phys. Rev. Lett.16, 999–1001 (1966)..

Kozawa, T. et al. Raman scattering from LO phonon-plasmon coupled modes in gallium nitride.J. Appl. Phys.75, 1098–1101 (1994)..

Irmer, G. et al. Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy.Phys. Status Solidi (B)119, 595–603 (1983)..

Sinha, K. et al. Determination of free carrier concentration inn-GaInP alloy by Raman scattering.J. Appl. Phys.78, 2515–2519 (1995)..

Pinczuk, A., Shah, J.&Wolff, P. A. Collective modes of photoexcited electron-hole plasmas in GaAs.Phys. Rev. Lett.47, 1487–1490 (1981)..

Fluegel, B. et al. Plasmonic all-optical tunable wavelength shifter.Nat. Photonics1, 701–703 (2007)..

Chen, Q. et al. Impact of individual structural defects in GaAs solar cells: A correlative and in operando investigation of signatures, structures, and effects.Adv. Optical Mater.9, 2001487 (2021)..

Irmer, G., Wenzel, M.&Monecke, J. Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra ofp-type GaAs: Zn.Phys. Rev. B56, 9524–9538 (1997)..

Mlayah, A. et al. Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs.J. Appl. Phys.69, 4064–4070 (1991)..

Cheong, H. M. et al. Effects of spontaneous ordering on Raman spectra of GaInP2.Phys. Rev. B56, 1882–1887 (1997)..

Wang, P. D. et al. Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etchedn+-GaAs.J. Appl. Phys.71, 3754–3759 (1992)..

Abstreiter, G. etal. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs.Appl. Phys.16, 345–352 (1978)..

Lee, J. et al. Room-temperature band-edge photoluminescence from cadmium telluride.Phys. Rev. B49, 1668–1676 (1994)..

Komiya, S., Yamaguchi, A.&Umebu, I. Characterization of radiative efficiency in double heterostructures of InGaAsP/InP by photoluminescence intensity analysis.Solid-State Electron.29, 235–240 (1986)..

Ahrenkiel, R. K. et al. Recombination lifetime of In0.53Ga0.47As as a function of doping density.Appl. Phys. Lett.72, 3470–3472 (1998)..

Zhang, X. G.&Pantelides, S. T. Theory of space charge limited currents.Phys. Rev. Lett.108, 266602 (2012)..

Mitonneau, A. et al. Electron and hole capture cross-sections at deep centers in gallium arsenide.Rev. de. Phys. Appliquée14, 853–861 (1979)..

Varshni, Y. P. Band-to-band radiative recombination in groups IV, VI, and III–V semiconductors (I).Phys. Status Solidi (B)19, 459–514 (1967)..

Schnitzer, I. et al. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures.Appl. Phys. Lett.62, 131–133 (1993)..

Strauss, U., Rühle, W. W.&Köhler, K. Auger recombination in intrinsic GaAs.Appl. Phys. Lett.62, 55–57 (1993)..

Johnson, N. M. Deep-level transient spectroscopy: Characterization and identification of electronic defects.Opt. Eng.25, 255698 (1986)..

Saitoh, T. et al. In situ surface state spectroscopy by photoluminescence and surface current transport for compound semiconductors.Japan. J. Appl. Phys.30, 3750–3754 (1991)..

Gfroerer, T. H. et al. Defect-related density of states in low-band gap InxGa1−xAs/InAsyP1−ydouble heterostructures grown on InP substrates.Appl. Phys. Lett.80, 4570–4572 (2002)..

DiNezza, M. J. et al. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy.Appl. Phys. Lett.103, 193901 (2013)..

Steiner, M. A. et al. Optical enhancement of the open-circuit voltage in high quality GaAs solar cells.J. Appl. Phys.113, 123109 (2013)..

Zhang, S. et al. Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging.J. Lumin.185, 200–204 (2017)..

Park, T. et al.In operandomicro-Raman three-dimensional thermometry with diffraction-limit spatial resolution for GaN-based light-emitting diodes.Phys. Rev. Appl.10, 034049 (2018)..

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