"Clean" doping to advance 2D material phototransistors

Zhen Wang; Peng Wang; Weida Hu

doi:10.1038/s41377-022-00842-4

Go to Nature Website

Your Location：

Home >

Browse articles >

"Clean" doping to advance 2D material phototransistors

News & Views

- "Clean" doping to advance 2D material phototransistors
- Light: Science & Applications Vol. 11, Issue 7, Pages: 1322-1323(2022)
- Affiliations：
  
  1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China
- Author bio：
  
  Peng Wang (w_peng@mail.sitp.ac.cn)
  Weida Hu (wdhu@mail.sitp.ac.cn)
- Funds：
- DOI：10.1038/s41377-022-00842-4
  CLC：
Scan for full text
Wang, Z., Wang, P. & Hu, W. D. "Clean" doping to advance 2D material phototransistors. Light: Science & Applications, 11, 1322-1323 (2022).
DOI：

Wang, Z., Wang, P. & Hu, W. D. "Clean" doping to advance 2D material phototransistors. Light: Science & Applications, 11, 1322-1323 (2022). DOI： 10.1038/s41377-022-00842-4.

摘要

Abstract

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal "clean" doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication.

关键词

Keywords

references

B. W. H. Baugher , H. O. H. Churchill , Y. Yang , P. Jarillo-Herrero . Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide . Nat. Nanotechn. , 2014 . 9 262 -267 . DOI:10.1038/nnano.2014.25http://doi.org/10.1038/nnano.2014.25 .

X. Zhang , 等 . Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode . Nat. Commun. , 2017 . 8 15881 DOI:10.1038/ncomms15881http://doi.org/10.1038/ncomms15881 .

Y. Gong , 等 . Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics . Nat. Nanotechn. , 2018 . 13 294 -299 . DOI:10.1038/s41565-018-0069-3http://doi.org/10.1038/s41565-018-0069-3 .

Y. Jin , 等 . A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2 . Adv. Mater. , 2015 . 27 5534 -5540 . DOI:10.1002/adma.201502278http://doi.org/10.1002/adma.201502278 .

Z. Wang , 等 . Controllable doping in 2D layered materials . Adv. Mater. , 2021 . 33 2104942 DOI:10.1002/adma.202104942http://doi.org/10.1002/adma.202104942 .

F. Wu , 等 . High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region . Nat. Commun. , 2019 . 10 4663 DOI:10.1038/s41467-019-12707-3http://doi.org/10.1038/s41467-019-12707-3 .

P. Wu , 等 . Van der Waals two-color infrared photodetector . Light Sci. Appl. , 2022 . 11 6 DOI:10.1038/s41377-021-00694-4http://doi.org/10.1038/s41377-021-00694-4 .

Xia, H. et al. Pristine PN junction toward atomic layer devices. Light Sci. Appl. https://doi.org/10.1038/s41377-022-00814-8LSA20220509https://doi.org/10.1038/s41377-022-00814-8LSA20220509 (2022).

Guo, Z. et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor. eLight 2, 9 (2022). https://doi.org/10.1186/s43593-022-00017-zhttps://doi.org/10.1186/s43593-022-00017-z

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰