Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu. P. T. Nguyen

doi:10.1038/s41377-022-00861-1

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Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

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- Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
- Light: Science & Applications Vol. 11, Issue 7, Pages: 1318-1319(2022)
- Affiliations：
  
  1.New Jersey Institute of Technology, Department of Electrical & Computer Engineering, Newark, NJ, 07102, USA
- Author bio：
  
  Hieu P. T. Nguyen (hieu.p.nguyen@njit.edu)
- Funds：
- DOI：10.1038/s41377-022-00861-1
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Nguyen, H. P. T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light: Science & Applications, 11, 1318-1319 (2022).
DOI：

Nguyen, H. P. T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices. Light: Science & Applications, 11, 1318-1319 (2022). DOI： 10.1038/s41377-022-00861-1.

摘要

Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

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references

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