Electrical control of quantum emitters in a Van der Waals heterostructure

Simon J. U. White; Tieshan Yang; Nikolai Dontschuk; Chi Li; Zai-Quan Xu; Mehran Kianinia; Alastair Stacey; Milos Toth; Igor Aharonovich

doi:10.1038/s41377-022-00877-7

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Electrical control of quantum emitters in a Van der Waals heterostructure

Original Articles

- Electrical control of quantum emitters in a Van der Waals heterostructure
- Light: Science & Applications Vol. 11, Issue 8, Pages: 1790-1798(2022)
- Affiliations：
  
  1.School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
  2.ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia
  3.School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia
  4.School of Science, RMIT University, Melbourne, VIC, 3001, Australia
- Author bio：
  
  Milos Toth (milos.toth@uts.edu.au)
  Igor Aharonovich (igor.aharonovich@uts.edu.au)
- Funds：
- DOI：10.1038/s41377-022-00877-7
  CLC：
- Published：31 August 2022，
  
  Published Online：20 June 2022，
  
  Received：23 February 2022，
  
  Revised：01 June 2022，
  
  Accepted：07 June 2022
- Accepted：
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White, S. J. U. et al. Electrical control of quantum emitters in a Van der Waals heterostructure. Light: Science & Applications, 11, 1790-1798 (2022).
DOI：

White, S. J. U. et al. Electrical control of quantum emitters in a Van der Waals heterostructure. Light: Science & Applications, 11, 1790-1798 (2022). DOI： 10.1038/s41377-022-00877-7.

摘要

Abstract

Controlling and manipulating individual quantum systems in solids underpins the growing interest in the development of scalable quantum technologies. Recently

hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However

the large bandgap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study the electrical control of emitters. Here

we show an approach to electrically modulate quantum emitters in an hBN-graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably

a significant number of quantum emitters are intrinsically dark and become optically active at non-zero voltages. To explain the results

we provide a heuristic electrostatic model of this unique behavior. Finally

employing these devices we demonstrate a nearly-coherent source with linewidths of ~160 MHz. Our results enhance the potential of hBN for tunable solid-state quantum emitters for the growing field of quantum information science.

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references

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