Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS<sub>x</sub> core-shell nanowires

Danhao Wang; Wentiao Wu; Shi Fang; Yang Kang; Xiaoning Wang; Wei Hu; Huabin Yu; Haochen Zhang; Xin Liu; Yuanmin Luo; Jr-Hau He; Lan Fu; Shibing Long; Sheng Liu; Haiding Sun

doi:10.1038/s41377-022-00912-7

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Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS_x core-shell nanowires

Original Articles

- Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS_x core-shell nanowires
- Light: Science & Applications Vol. 11, Issue 11, Pages: 2633-2645(2022)
- Affiliations：
  
  1.School of Microelectronics, University of Science and Technology of China, Hefei 230029, China
  2.Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei 230029, China
  3.Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR 999077, China
  4.Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
  5.School of Microelectronics, Wuhan University, Wuhan 430072, China
  6.The CAS Key Laboratory of Wireless-Optical Communications, University of Science and Technology of China, Hefei 230029, China
- Author bio：
  
  Wei Hu (whuustc@ustc.edu.cn)
  Sheng Liu (shengliu@whu.edu.cn)
  Haiding Sun (haiding@ustc.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-00912-7
  CLC：
- Published：30 November 2022，
  
  Published Online：19 July 2022，
  
  Received：26 January 2022，
  
  Revised：20 June 2022，
  
  Accepted：23 June 2022
- Accepted：
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Wang, D. H. et al. Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS_x core-shell nanowires. Light: Science & Applications, 11, 2633-2645 (2022).
DOI：

Wang, D. H. et al. Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS_x core-shell nanowires. Light: Science & Applications, 11, 2633-2645 (2022). DOI： 10.1038/s41377-022-00912-7.

摘要

Abstract

Ⅲ-Ⅴ semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However

solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires

new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein

we combine high-crystal-quality Ⅲ-nitride nanowires with amorphous molybdenum sulfides (a-MoS

) to construct Ⅲ-nitride/a-MoS

core-shell nanostructures. Upon light illumination

such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment

demonstrating a negative photoresponsivity of −100.42 mA W

−1

under 254 nm illumination

and a positive photoresponsivity of 29.5 mA W

−1

under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS

decoration accelerates the reaction process at the electrolyte/nanowire interface

leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly

such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition

showing great promise to build light-wavelength controllable sensing devices in the future.

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Keywords

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Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoSx core-shell nanowires

DOI：10.1038/s41377-022-00912-7

摘要

Abstract

关键词

Keywords

references

Observation of polarity-switchable photoconductivity in Ⅲ-nitride/MoS_x core-shell nanowires