Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Chen Shang; Kaiyin Feng; Eamonn T. Hughes; Andrew Clark; Mukul Debnath; Rosalyn Koscica; Gerald Leake; Joshua Herman; David Harame; Peter Ludewig; Yating Wan; John E. Bowers

doi:10.1038/s41377-022-00982-7

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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Original Articles

- Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
- Light: Science & Applications Vol. 11, Issue 11, Pages: 2698-2705(2022)
- Affiliations：
  
  1.Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
  2.Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
  3.IQE, Inc., Greensboro, NC, 27409, USA
  4.RF SUNY Polytechnic Institute, Albany, NY, 12203, USA
  5.NAsPⅢ/Ⅴ GmbH, Marburg, Germany
- Author bio：
  
  John E. Bowers (bowers@ece.ucsb.edu)
- Funds：
- DOI：10.1038/s41377-022-00982-7
  CLC：
- Published：30 November 2022，
  
  Published Online：14 October 2022，
  
  Received：16 May 2022，
  
  Revised：13 September 2022，
  
  Accepted：14 September 2022
- Accepted：
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Shang, C. et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers. Light: Science & Applications, 11, 2698-2705 (2022).
DOI：

Shang, C. et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers. Light: Science & Applications, 11, 2698-2705 (2022). DOI： 10.1038/s41377-022-00982-7.

摘要

Abstract

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of Ⅲ–Ⅴ devices on Si at elevated temperatures. Yet

thick

defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here

we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved

contributing to continuous wave lasing to 60 ℃ and a maximum double-side output power of 126.6 mW at 20 ℃ with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

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