Research progress of large size SiC single crystal materials and devices

Xiufang Chen; Xianglong Yang; Xuejian Xie; Yan Peng; Longfei Xiao; Chen Shao; Huadong Li; Xiaobo Hu; Xiangang Xu

doi:10.1038/s41377-022-01037-7

Go to Nature Website

Your Location：

Home >

Browse articles >

Research progress of large size SiC single crystal materials and devices

Reviews

- Research progress of large size SiC single crystal materials and devices
- Light: Science & Applications Vol. 12, Issue 1, Pages: 60-67(2023)
- Affiliations：
  
  State Key Laboratory of Crystal Materials, Institute of novel semiconductors, Shandong University, Jinan, 250100, China
- Author bio：
  
  Xianglong Yang(yangxl2016@sdu.edu.cn)
  Xiangang Xu (xxu@sdu.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-01037-7
  CLC：
- Published：31 January 2023，
  
  Published Online：24 January 2023，
  
  Received：2 April 2022，
  
  Revised：16 September 2022，
  
  Accepted：9 November 2022
Scan for full text
Chen, X. F. et al. Research progress of large size SiC single crystal materials and devices. Light: Science & Applications, 12, 60-67 (2023).
DOI：

Chen, X. F. et al. Research progress of large size SiC single crystal materials and devices. Light: Science & Applications, 12, 60-67 (2023). DOI： 10.1038/s41377-022-01037-7.

摘要

Abstract

SiC semiconductor is the focus of recent international research. It is also an important raw material for China to achieve carbon emission peak and carbon neutrality. After nearly 20 years of research and development

we focus on the three types SiC crystals

n-type

p-type and semi-insulating

indicating the development of Shandong University for crystal growth. And defects control

electrical property

atomic polishing

and corresponding device authentication all obtain great progress. Total dislocation density of 6-inch n-type substrates decreases to 2307 cm

−2

where BPD (Basal Plane Dislocation) lowers to 333 cm

−2

and TSD (Threading Screw Dislocation) 19 cm

−2

. The full width at half maximum (FWHM) (0004) rocking curves is only 14.4 arcsec. The resistivity reaches more than 1E + 12 Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type SiC. The impurity concentrations in 6-inch high-purity semi-insulating (HPSI) SiC crystals reach extreme low levels. The devices made of various substrate materials have good performance.

关键词

Keywords

references

J. B. Casady, R. W. Johnson . Status of Silicon Carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review . Solid-State Electron. , 1996 . 39 1409 -1422 . DOI:10.1016/0038-1101(96)00045-7http://doi.org/10.1016/0038-1101(96)00045-7 .

S. G. Mueller , 等 . The status of SiC bulk growth from an industrial point of view . J. Cryst. Growth , 2000 . 211 325 -332 . DOI:10.1016/S0022-0248(99)00835-0http://doi.org/10.1016/S0022-0248(99)00835-0 .

H. I. Helava , 等 . Growth of low-defect SiC and AlN crystals in refractory metal crucibles . Mater. Sci. Forum , 2013 . 742 85 -90 . DOI:10.4028/www.scientific.net/MSF.740-742.85http://doi.org/10.4028/www.scientific.net/MSF.740-742.85 .

Hu, G. et al. Formation Mechanism of Two Types of Polytype Transformation in off-axis 4H-SiC Boules. 2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), 74–77 (2021).

Yang, X. et al. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Trans. Tech. Publ. 821-823, 68–72 (2015).

Y. Xianglong , 等 . Growth of SiC single crystals on patterned seeds by a sublimation method . J. Cryst. Growth , 2016 . 439 7 -12 . DOI:10.1016/j.jcrysgro.2015.12.030http://doi.org/10.1016/j.jcrysgro.2015.12.030 .

X. Chen , 等 . Reduction of dislocation density of SiC crystals grown on seeds after H2 etching . Mater. Sci. Forum , 2017 . 897 19 -23 . DOI:10.4028/www.scientific.net/MSF.897.19http://doi.org/10.4028/www.scientific.net/MSF.897.19 .

P. YIN , 等 . Dislocation distribution in SiC wafers studied by lattice distortion detector . J. Synth. Cryst. , 2021 . 50 19 -23 . DOI:http://doi.org/ .

Y. Cui , 等 . Influence of nitrogen concentrations on the lattice constants and resistivities of\\r, n\\r, -type 4H-SiC single crystals . Cryst. Growth Des. , 2015 . 15 3131 -3136 . DOI:10.1021/cg501216dhttp://doi.org/10.1021/cg501216d .

X. Wang , J. A. Cooper . High-voltage n-channel IGBTs on free-standing 4H-SiC epilayers . IEEE Trans. Electron Devices , 2010 . 57 511 -515 . DOI:10.1109/TED.2009.2037379http://doi.org/10.1109/TED.2009.2037379 .

Sui, Y., Walden, G. G., Wang, X. K. & Cooper, J. A. Device options and design considerations for high-Vvoltage (10-20 kV) SiC power switching devices. Mater. Sci. Forum, 527-529, 1449–1452 (2006).

Sauvik, et al. 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n(-) substrates. IEEE Electron Device Lett. 37, 317–320 (2016).

H. Matsuura , 等 . Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration . Appl. Phys. Express , 2018 . 11101302.1 -101302.5 . DOI:10.7567/APEX.11.101302http://doi.org/10.7567/APEX.11.101302 .

Shirai, T., Danno, K., Seki, A., Sakamoto, H. & Bessho, T. Solution growth of p-Type 4H-SiC bulk crystals with low resistivity. Mater. Sci. Forum 778-780, 75–78 (2014).

Xie, X. et al. Growth and electrical characterization of Al-N Co-doping SiC single crystals. China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, 136–139 (2017).

X. Xie , 等 . Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique . Scr. Materialia , 2019 . 167 76 -80 . DOI:10.1016/j.scriptamat.2019.03.039http://doi.org/10.1016/j.scriptamat.2019.03.039 .

V. I. Ahmad , 等 . Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering . Appl. Phys. Lett. , 2005 . 86 173503 -173503 . DOI:10.1063/1.1906305http://doi.org/10.1063/1.1906305 .

Wang, R. et al. Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals. J. Alloys Compounds 691, 1033–1039 (2017).

X. Wang , 等 . MOCVD-grown AlGaN/AlN/GaN HEMT structure with high mobility gan thin layer as channel on SiC . Chin. J. Semiconductors , 2006 . 27 1521 -1525 . DOI:http://doi.org/ .

A. Fletcher , D. Nirmal , J. Ajayan , L. Arivazhagan . An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT . Silicon , 2021 . 3 1591 -1598 . DOI:10.1007/s12633-020-00549-4http://doi.org/10.1007/s12633-020-00549-4 .

Y. Gao , 等 . 150 mm 4H-SiC substrate with low defect density . Mater. Sci. Forum , 2016 . 858 41 -44 . DOI:10.4028/www.scientific.net/MSF.858.41http://doi.org/10.4028/www.scientific.net/MSF.858.41 .

B. K. Jang , J. H. Park , J. W. Choi , E. Yang , W. J. Lee . Modified hot-zone design of growth cell for reducing the warpage of 6"-SiC wafer . Mater. Sci. Forum , 2020 . 1004 32 -36 . DOI:10.4028/www.scientific.net/MSF.1004.32http://doi.org/10.4028/www.scientific.net/MSF.1004.32 .

Xianglong, Y. et al. 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) (2019).

X. Yang , 等 . Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods . CrystEngComm , 2018 . 20 6957 -6962 . DOI:10.1039/C8CE00910Dhttp://doi.org/10.1039/C8CE00910D .

X. Xie , 等 . Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction . CrystEngComm , 2017 . 19 6527 -6532 . DOI:10.1039/C7CE01552Fhttp://doi.org/10.1039/C7CE01552F .

O. Ambacher , 等 . Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped . J. Appl. Phys. , 2000 . 87 334 -344 . DOI:10.1063/1.371866http://doi.org/10.1063/1.371866 .

S. C. Jain , M. Willander , J. Narayan , R. V. Overstraeten . Iii–nitrides: growth, characterization, and properties . J. Appl. Phys. , 2000 . 87 965 -1006 . DOI:10.1063/1.371971http://doi.org/10.1063/1.371971 .

Q. Wang , 等 . Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHZ . J. Semiconductors , 2021 . 42 8 DOI:10.1088/1674-4926/42/12/122802http://doi.org/10.1088/1674-4926/42/12/122802 .

L. Xiao , 等 . Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption . Appl. Opt. , 2018 . 57 2804 -2808 . DOI:10.1364/AO.57.002804http://doi.org/10.1364/AO.57.002804 .

C. Luan , 等 . A new phenomenon in semi-insulating 4H-SiC photoconductive semiconductor switches . IEEE Trans. Electron Devices , 2018 . 65 172 -175 . DOI:10.1109/TED.2017.2777600http://doi.org/10.1109/TED.2017.2777600 .

Ywa, C. et al. Flexible graphene-assisted van der waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering. Appl. Surface Sci. 520, 146358 (2020).

Y. Yu , 等 . Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes . Light Sci. Appl. , 2021 . 10 8 DOI:10.1038/s41377-021-00560-3http://doi.org/10.1038/s41377-021-00560-3 .

L. Sun , 等 . The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth . Rsc Adv. , 2016 . 101039.C6RA21858J DOI:http://doi.org/ .

W. Yu , X. Chen , X. Hu , X. Xu . Wafer-scale graphene on 4-inch SiC . Mater. Sci. Forum , 2016 . 858 1133 -1136 . DOI:10.4028/www.scientific.net/MSF.858.1133http://doi.org/10.4028/www.scientific.net/MSF.858.1133 .

F. Zhang , 等 . High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching . Mater. Lett. , 2017 . 195 82 -85 . DOI:10.1016/j.matlet.2017.02.105http://doi.org/10.1016/j.matlet.2017.02.105 .

C. Yu , 等 . Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation . J. Mater. Sci.: Mater. Electron. , 2017 . 28 3884 -3890 . DOI:http://doi.org/ DOI:10.1007/s10854-016-6001-4http://doi.org/10.1007/s10854-016-6001-4https://link.springer.com/article/10.1007/s10854-016-6001-4https://link.springer.com/article/10.1007/s10854-016-6001-4, .

X. Yang , 等 . Growth and device application of high quality N-type SiC single crystals . J. Synth. Cryst. , 2015 . 44 1427 -1431 . DOI:http://doi.org/ .

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰