Phase-controlled van der Waals growth of wafer-scale 2D MoTe<sub>2</sub> layers for integrated high-sensitivity broadband infrared photodetection

Di Wu; Chenguang Guo; Longhui Zeng; Xiaoyan Ren; Zhifeng Shi; Long Wen; Qin Chen; Meng Zhang; Xin Jian Li; Chong-Xin Shan; Jiansheng Jie

doi:10.1038/s41377-022-01047-5

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Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection

Original Articles

- Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection
- Light: Science & Applications Vol. 12, Issue 1, Pages: 77-88(2023)
- Affiliations：
  
  1.School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
  2.Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA
  3.Institute of Nanophotonics, Jinan University, Guangzhou, Guangdong, 511443, China
  4.Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
- Author bio：
  
  Longhui Zeng (lhzeng.hfut@gmail.com)
  Xin Jian Li (lixj@zzu.edu.cn)
  Jiansheng Jie (jsjie@suda.edu.cn)
- Funds：
- DOI：10.1038/s41377-022-01047-5
  CLC：
- Published：31 January 2023，
  
  Published Online：2 January 2023，
  
  Received：9 September 2022，
  
  Revised：21 November 2022，
  
  Accepted：25 November 2022
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Wu, D. et al. Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection. Light: Science & Applications, 12, 77-88 (2023).
DOI：

Wu, D. et al. Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection. Light: Science & Applications, 12, 77-88 (2023). DOI： 10.1038/s41377-022-01047-5.

摘要

Abstract

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However

the low charge separation efficiency

high noise level

and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here

we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe

layers. Importantly

the type-II Weyl semimetal 1T′-MoTe

features a unique orthorhombic lattice structure with a broken inversion symmetry

which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T′-MoTe

/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10

Jones in the mid-infrared (MIR) range. Moreover

the large-area synthesis of 2D MoTe

layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

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references

C. Y. Liu , 等 . Silicon/2D-material photodetectors: from near-infrared to mid-infrared . Light Sci. Appl. , 2021 . 10 123 DOI:10.1038/s41377-021-00551-4http://doi.org/10.1038/s41377-021-00551-4 .

H. Y. Wang , 等 . Van der Waals integration based on two‐dimensional materials for high‐performance infrared photodetectors . Adv. Funct. Mater. , 2021 . 31 2103106 DOI:10.1002/adfm.202103106http://doi.org/10.1002/adfm.202103106 .

G. F. Rao , 等 . Two-dimensional heterostructure promoted infrared photodetection devices . InfoMat , 2019 . 1 272 -288 . DOI:10.1002/inf2.12018http://doi.org/10.1002/inf2.12018 .

P. Wang , 等 . Sensing infrared photons at room temperature: from bulk materials to atomic layers . Small , 2019 . 15 1904396 DOI:10.1002/smll.201904396http://doi.org/10.1002/smll.201904396 .

A. Rogalski . Toward third generation HgCdTe infrared detectors . J. Alloy. Compd. , 2004 . 371 53 -57 . DOI:10.1016/j.jallcom.2003.06.005http://doi.org/10.1016/j.jallcom.2003.06.005 .

J. L. Wang , 等 . Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet—visible to infrared . Small , 2017 . 13 1700894 DOI:10.1002/smll.201700894http://doi.org/10.1002/smll.201700894 .

F. Sizov . Terahertz radiation detectors: the state-of-the-art . Semiconductor Sci. Technol. , 2018 . 33 123001 DOI:10.1088/1361-6641/aae473http://doi.org/10.1088/1361-6641/aae473 .

A. Rogalski . New material systems for third generation infrared photodetectors . Opto-Electron. Rev. , 2008 . 16 458 -482 . DOI:10.2478/s11772-008-0047-7http://doi.org/10.2478/s11772-008-0047-7 .

X. Tang , 等 . Dual-band infrared imaging using stacked colloidal quantum dot photodiodes . Nat. Photonics , 2019 . 13 277 -282 . DOI:10.1038/s41566-019-0362-1http://doi.org/10.1038/s41566-019-0362-1 .

Z. F. Chen , 等 . Synergistic effects of plasmonics and electron trapping in graphene short-wave infrared photodetectors with ultrahigh responsivity . ACS Nano , 2017 . 11 430 -437 . DOI:10.1021/acsnano.6b06172http://doi.org/10.1021/acsnano.6b06172 .

S. F. Yuan , 等 . Air-stable room-temperature mid-infrared photodetectors based on hBN/Black arsenic phosphorus/hBN heterostructures . Nano Lett. , 2018 . 18 3172 -3179 . DOI:10.1021/acs.nanolett.8b00835http://doi.org/10.1021/acs.nanolett.8b00835 .

J. Bullock , 等 . Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature . Nat. Photonics , 2018 . 12 601 -607 . DOI:10.1038/s41566-018-0239-8http://doi.org/10.1038/s41566-018-0239-8 .

N. Li , 等 . Solution-processable infrared photodetectors: materials, device physics, and applications . Mater. Sci. Eng. R. , 2021 . 146 100643 DOI:10.1016/j.mser.2021.100643http://doi.org/10.1016/j.mser.2021.100643 .

J. S. Guo , 等 . High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm . Light Sci. Appl. , 2020 . 9 29 DOI:10.1038/s41377-020-0263-6http://doi.org/10.1038/s41377-020-0263-6.

G. Konstantatos , 等 . Ultrasensitive solution-cast quantum dot photodetectors . Nature , 2006 . 442 180 -183 . DOI:10.1038/nature04855http://doi.org/10.1038/nature04855 .

M. S. Long , 等 . Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus . Sci. Adv. , 2017 . 3 e1700589 DOI:10.1126/sciadv.1700589http://doi.org/10.1126/sciadv.1700589 .

Q. S. Guo , 等 . Black phosphorus mid-infrared photodetectors with high gain . Nano Lett. , 2016 . 16 4648 -4655 . DOI:10.1021/acs.nanolett.6b01977http://doi.org/10.1021/acs.nanolett.6b01977 .

J. Yan , 等 . Dual-gated bilayer graphene hot-electron bolometer . Nat. Nanotechnol. , 2012 . 7 472 -478 . DOI:10.1038/nnano.2012.88http://doi.org/10.1038/nnano.2012.88 .

S. H. Choi , 等 . Large-scale synthesis of graphene and other 2D materials towards industrialization . Nat. Commun. , 2022 . 13 1484 DOI:10.1038/s41467-022-29182-yhttp://doi.org/10.1038/s41467-022-29182-y .

D. Akinwande , 等 . Graphene and two-dimensional materials for silicon technology . Nature , 2019 . 573 507 -518 . DOI:10.1038/s41586-019-1573-9http://doi.org/10.1038/s41586-019-1573-9 .

L. Zhou , 等 . Large-area synthesis of high-quality uniform few-layer MoTe2 . J. Am. Chem. Soc. , 2015 . 137 11892 -11895 . DOI:10.1021/jacs.5b07452http://doi.org/10.1021/jacs.5b07452 .

Z. J. Wang , 等 . MoTe2: a type-II weyl topological metal . Phys. Rev. Lett. , 2016 . 117 056805 DOI:10.1103/PhysRevLett.117.056805http://doi.org/10.1103/PhysRevLett.117.056805 .

L. Huang , 等 . Spectroscopic evidence for a type II Weyl semimetallic state in MoTe2 . Nat. Mater. , 2016 . 15 1155 -1160 . DOI:10.1038/nmat4685http://doi.org/10.1038/nmat4685 .

J. W. Lai , 等 . Anisotropic broadband photoresponse of layered type-II weyl semimetal MoTe2 . Adv. Mater. , 2018 . 30 1707152 DOI:10.1002/adma.201707152http://doi.org/10.1002/adma.201707152 .

T. A. Empante , 等 . Chemical vapor deposition growth of few-layer MoTe2 in the 2H, 1T', and 1T phases: tunable properties of MoTe2 films . ACS Nano , 2017 . 11 900 -905 . DOI:10.1021/acsnano.6b07499http://doi.org/10.1021/acsnano.6b07499 .

J. Liu , 等 . Semimetals for high-performance photodetection . Nat. Mater. , 2020 . 19 830 -837 . DOI:10.1038/s41563-020-0715-7http://doi.org/10.1038/s41563-020-0715-7 .

L. Wang , 等 . Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting . Light Sci. Appl. , 2022 . 11 53 DOI:10.1038/s41377-022-00741-8http://doi.org/10.1038/s41377-022-00741-8 .

H. X. Jiao , 等 . HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector . Sci. Adv. , 2022 . 8 eabn1811 DOI:10.1126/sciadv.abn1811http://doi.org/10.1126/sciadv.abn1811 .

D. Jariwala , T. J. Marks , M. C. Hersam . Mixed-dimensional van der Waals heterostructures . Nat. Mater. , 2017 . 16 170 -181 . DOI:10.1038/nmat4703http://doi.org/10.1038/nmat4703 .

L. H. Zeng , 等 . Van der Waals epitaxial growth of mosaic-like 2D platinum ditelluride layers for room-temperature mid-infrared photodetection up to 10.6 µm . Adv. Mater. , 2020 . 32 2004412 DOI:10.1002/adma.202004412http://doi.org/10.1002/adma.202004412.

Y. Wang , 等 . Structural phase transition in monolayer MoTe2 driven by electrostatic doping . Nature , 2017 . 550 487 -491 . DOI:10.1038/nature24043http://doi.org/10.1038/nature24043 .

X. L. Xu , 等 . Millimeter-scale single-crystalline semiconducting MoTe2 via solid-to-solid phase transformation . J. Am. Chem. Soc. , 2019 . 141 2128 -2134 . DOI:10.1021/jacs.8b12230http://doi.org/10.1021/jacs.8b12230 .

Y. Yoo , 等 . In-plane 2H-1T' MoTe2 homojunctions synthesized by flux-controlled phase engineering . Adv. Mater. , 2017 . 29 1605461 DOI:10.1002/adma.201605461http://doi.org/10.1002/adma.201605461 .

Y. Chen , 等 . High-performance photovoltaic detector based on MoTe2/MoS2 van der Waals heterostructure . Small , 2018 . 14 1703293 DOI:10.1002/smll.201703293http://doi.org/10.1002/smll.201703293 .

P. Xiao , 等 . Solution-processed 3D RGO-MoS2/pyramid Si heterojunction for ultrahigh detectivity and ultra-broadband photodetection . Adv. Mater. , 2018 . 30 1801729 DOI:10.1002/adma.201801729http://doi.org/10.1002/adma.201801729 .

Y. J. Fang , 等 . Accurate characterization of next-generation thin-film photodetectors . Nat. Photonics , 2019 . 13 1 -4 . DOI:10.1038/s41566-018-0288-zhttp://doi.org/10.1038/s41566-018-0288-z .

H. Huang , 等 . Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect . Nanotechnology , 2016 . 27 445201 DOI:10.1088/0957-4484/27/44/445201http://doi.org/10.1088/0957-4484/27/44/445201 .

Y. Q. Bie , 等 . A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits . Nat. Nanotechnol. , 2017 . 12 1124 -1129 . DOI:10.1038/nnano.2017.209http://doi.org/10.1038/nnano.2017.209 .

W. Z. Yu , 等 . Near-infrared photodetectors based on MoTe2/graphene heterostructure with high responsivity and flexibility . Small , 2017 . 13 1700268 DOI:10.1002/smll.201700268http://doi.org/10.1002/smll.201700268 .

R. Maiti , 等 . Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits . Nat. Photonics , 2020 . 14 578 -584 . DOI:10.1038/s41566-020-0647-4http://doi.org/10.1038/s41566-020-0647-4 .

D. Kim , 等 . Two-dimensional phase-engineered 1T′- and 2H-MoTe2-based near-infrared photodetectors with ultra-fast response . J. Alloy. Compd. , 2019 . 789 960 -965 . DOI:10.1016/j.jallcom.2019.03.121http://doi.org/10.1016/j.jallcom.2019.03.121 .

Z. J. Lu , 等 . Ultrahigh speed and broadband few-layer MoTe2/Si 2D-3D heterojunction-based photodiodes fabricated by pulsed laser deposition . Adv. Funct. Mater. , 2020 . 30 1907951 DOI:10.1002/adfm.201907951http://doi.org/10.1002/adfm.201907951 .

L. J. Pi , 等 . Broadband convolutional processing using band-alignment-tunable heterostructures . Nat. Electron. , 2022 . 5 248 -254 . DOI:10.1038/s41928-022-00747-5http://doi.org/10.1038/s41928-022-00747-5 .

Y. Wang , 等 . Fast uncooled mid-wavelength infrared photodetectors with heterostructures of van der Waals on epitaxial HgCdTe . Adv. Mater. , 2022 . 34 2107772 DOI:10.1002/adma.202107772http://doi.org/10.1002/adma.202107772 .

X. X. Li , 等 . Broadband InSb/Si heterojunction photodetector with graphene transparent electrode . Nanotechnology , 2020 . 31 315204 DOI:10.1088/1361-6528/ab884chttp://doi.org/10.1088/1361-6528/ab884c .

J. Piotrowski , A. Rogalski . Uncooled long wavelength infrared photon detectors . Infrared Phys. Technol. , 2004 . 46 115 -131 . DOI:10.1016/j.infrared.2004.03.016http://doi.org/10.1016/j.infrared.2004.03.016 .

S. M. Chi , 等 . A wide-range photosensitive weyl semimetal single crystal—TaAs . Adv. Mater. , 2018 . 30 1801372 DOI:10.1002/adma.201801372http://doi.org/10.1002/adma.201801372 .

C. J. Yin , 等 . Ultrabroadband photodetectors up to 10.6 µm based on 2D Fe3O4 nanosheets . Adv. Mater. , 2020 . 32 2002237 DOI:10.1002/adma.202002237http://doi.org/10.1002/adma.202002237 .

X. G. Sun , 等 . Research status of lead selenide thin films used for infrared detectors . Infrared Technol. , 2016 . 38 1005 -1019 . DOI:http://doi.org/ .

M. S. Long , 等 . Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability . ACS Nano , 2019 . 13 2511 -2519 . DOI:http://doi.org/ .

D. Wu , 等 . A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect . Nanoscale , 2021 . 13 13550 -13557 . DOI:10.1039/D1NR03243Ghttp://doi.org/10.1039/D1NR03243G .

D. Wu , 等 . Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing . J. Mater. Chem. A , 2020 . 8 3632 -3642 . DOI:10.1039/C9TA13611Hhttp://doi.org/10.1039/C9TA13611H .

E. P. Wu , 等 . In situ fabrication of 2D WS2/Si type-ii heterojunction for self-powered broadband photodetector with response up to mid-infrared . ACS Photonics , 2019 . 6 565 -572 . DOI:10.1021/acsphotonics.8b01675http://doi.org/10.1021/acsphotonics.8b01675 .

L. H. Zeng , 等 . Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm . NPG Asia Mater. , 2018 . 10 352 -362 . DOI:10.1038/s41427-018-0035-4http://doi.org/10.1038/s41427-018-0035-4 .

D. Wu , 等 . Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction . Sol. Energy Mater. Sol. Cells , 2018 . 182 272 -280 . DOI:10.1016/j.solmat.2018.03.017http://doi.org/10.1016/j.solmat.2018.03.017 .

L. Wang , 等 . MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors . Adv. Funct. Mater. , 2015 . 25 2910 -2919 . DOI:10.1002/adfm.201500216http://doi.org/10.1002/adfm.201500216 .

L. H. Zeng , 等 . Multilayered PdSe2/perovskite schottky junction for fast, self-powered, polarization-sensitive, broadband photodetectors, and image sensor application . Adv. Sci. , 2019 . 6 1901134 DOI:10.1002/advs.201901134http://doi.org/10.1002/advs.201901134 .

X. W. Tong , 等 . Direct tellurization of Pt to synthesize 2D PtTe2 for high-performance broadband photodetectors and NIR image sensors . ACS Appl. Mater. Interfaces , 2020 . 12 53921 -53931 . DOI:10.1021/acsami.0c14996http://doi.org/10.1021/acsami.0c14996 .

D. Wu , 等 . Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D schottky junction with ultrafast speed . Nano Res. , 2021 . 14 1973 -1979 . DOI:10.1007/s12274-021-3346-7http://doi.org/10.1007/s12274-021-3346-7 .

J. S. Jie , 等 . Photoconductive characteristics of single-crystal CdS nanoribbons . Nano Lett. , 2006 . 6 1887 -1892 . DOI:10.1021/nl060867ghttp://doi.org/10.1021/nl060867g .

D. Wu , 等 . Ultrabroadband and high-detectivity photodetector based on WS2/Ge heterojunction through defect engineering and interface passivation . ACS Nano , 2021 . 15 10119 -10129 . DOI:10.1021/acsnano.1c02007http://doi.org/10.1021/acsnano.1c02007 .

G. Kresse , J. Furthmüller . Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set . Phys. Rev. B , 1996 . 54 11169 -11186 . DOI:10.1103/PhysRevB.54.11169http://doi.org/10.1103/PhysRevB.54.11169 .

P. E. Blöchl . Projector augmented-wave method . Phys. Rev. B , 1994 . 50 17953 -17979 . DOI:10.1103/PhysRevB.50.17953http://doi.org/10.1103/PhysRevB.50.17953 .

G. Kresse , D. Joubert . From ultrasoft pseudopotentials to the projector augmented-wave method . Phys. Rev. B , 1999 . 59 1758 -1775 . DOI:10.1103/PhysRevB.59.1758http://doi.org/10.1103/PhysRevB.59.1758 .

J. P. Perdew , K. Burke , M. Ernzerhof . Generalized gradient approximation made simple . Phys. Rev. Lett. , 1996 . 77 3865 -3868 . DOI:10.1103/PhysRevLett.77.3865http://doi.org/10.1103/PhysRevLett.77.3865 .

S. Grimme , 等 . A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu . J. Chem. Phys. , 2010 . 132 154104 DOI:10.1063/1.3382344http://doi.org/10.1063/1.3382344 .

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Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

DOI：10.1038/s41377-022-01047-5

摘要

Abstract

关键词

Keywords

references

Phase-controlled van der Waals growth of wafer-scale 2D MoTe₂ layers for integrated high-sensitivity broadband infrared photodetection