
1.Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro- and Nano-Photonic Structure (MOE), Fudan University, Shanghai, 200433, China
2.Department of Physics, University of California, Berkeley, CA, 94720, USA
3.Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China
Chuanshan Tian (cstian@fudan.edu.cn)
Y. Ron Shen (yrshen@berkeley.edu)
Published:28 February 2023,
Published Online:2 February 2023,
Received:5 December 2022,
Revised:28 December 2022,
Accepted:3 January 2023
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Le, J. M. et al. A novel scheme for ultrashort terahertz pulse generation over a gapless wide spectral range: Raman-resonance-enhanced four-wave mixing. Light: Science & Applications, 12, 232-238 (2023).
Le, J. M. et al. A novel scheme for ultrashort terahertz pulse generation over a gapless wide spectral range: Raman-resonance-enhanced four-wave mixing. Light: Science & Applications, 12, 232-238 (2023). DOI: 10.1038/s41377-023-01071-z.
Ultrashort energetic terahertz (THz) pulses have created an exciting new area of research on light interactions with matter. For material studies in small laboratories
widely tunable femtosecond THz pulses with peak field strength close to MV cm
−1
are desired. Currently
they can be largely acquired by optical rectification and difference frequency generation in crystals without inversion symmetry. We describe in this paper a novel scheme of THz pulse generation with no frequency tuning gap based on Raman-resonance-enhanced four-wave mixing in centrosymmetric media
particularly diamond. We show that we could generate highly stable
few-cycle pulses with near-Gaussian spatial and temporal profiles and carrier frequency tunable from 5 to
>
20 THz. They had a stable and controllable carrier-envelop phase and carried ~15 nJ energy per pulse at 10 THz (with a peak field strength of ~1 MV cm
−1
at focus) from a 0.5-mm-thick diamond. The measured THz pulse characteristics agreed well with theoretical predictions. Other merits of the scheme are discussed
including the possibility of improving the THz output energy to a much higher level.
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