
1.School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
3.University of Chinese Academy of Sciences, 100049, Beijing, China
4.Institute of Intelligent Machines, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
5.Jianghuai Frontier Technology Coordination and Innovation Center, Hefei, 230088, China
6.Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
Jinshui Miao (jsmiao@mail.sitp.ac.cn)
Bo Song (songbo@iim.ac.cn)
Weida Hu (wdhu@mail.sitp.ac.cn)
Published:28 February 2023,
Published Online:7 February 2023,
Received:15 November 2022,
Revised:6 January 2023,
Accepted:13 January 2023
Scan for full text
Fu, X. et al. Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light: Science & Applications, 12, 284-293 (2023).
Fu, X. et al. Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light: Science & Applications, 12, 284-293 (2023). DOI: 10.1038/s41377-023-01079-5.
Conventional artificial intelligence (AI) machine vision technology
based on the von Neumann architecture
uses separate sensing
computing
and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors
processors and memory
however
results in high-power consumption and latency. A more efficient approach is to offload some of the memory and computational tasks to sensor elements that can perceive and process the optical signal simultaneously. Here
we proposed a non-volatile photomemristor
in which the reconfigurable responsivity can be modulated by the charge and/or photon flux through it and further stored in the device. The non-volatile photomemristor has a simple two-terminal architecture
in which photoexcited carriers and oxygen-related ions are coupled
leading to a displaced and pinched hysteresis in the current-voltage characteristics. For the first time
non-volatile photomemristors implement computationally complete logic with photoresponse-stateful operations
for which the same photomemristor serves as both a logic gate and memory
using photoresponse as a physical state variable instead of light
voltage and memresistance. The polarity reversal of photomemristors shows great potential for in-memory sensing and computing with feature extraction and image recognition for neuromorphic vision.
R. H. Masland. The neuronal organization of the retina. Neuron, 2012. 76266-280. DOI:10.1016/j.neuron.2012.10.002http://doi.org/10.1016/j.neuron.2012.10.002.
T. Gollisch, M. Meister. Eye smarter than scientists believed: neural computations in circuits of the retina. Neuron, 2010. 65150-164. DOI:10.1016/j.neuron.2009.12.009http://doi.org/10.1016/j.neuron.2009.12.009.
G. Indiveri, R. Douglas. Neuromorphic vision sensors. Science, 2000. 2881189-1190. DOI:10.1126/science.288.5469.1189http://doi.org/10.1126/science.288.5469.1189.
C. Pan, 等. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nat. Electr., 2020. 3383-390. DOI:10.1038/s41928-020-0433-9http://doi.org/10.1038/s41928-020-0433-9.
F. C. Zhou, Y. Chai. Near-sensor and in-sensor computing. Nat. Electr., 2020. 3664-671. DOI:10.1038/s41928-020-00501-9http://doi.org/10.1038/s41928-020-00501-9.
X. W. Liu, 等. Reconfigurable compute-in-memory on field-programmable ferroelectric diodes. Nano Lett., 2022. 227690-7698. DOI:10.1021/acs.nanolett.2c03169http://doi.org/10.1021/acs.nanolett.2c03169.
X. W. Liu, 等. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory. Nano Lett., 2021. 213753-3761. DOI:10.1021/acs.nanolett.0c05051http://doi.org/10.1021/acs.nanolett.0c05051.
X. W. Liu, 等. Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios. Appl. Phys. Lett., 2021. 118202901DOI:10.1063/5.0051940http://doi.org/10.1063/5.0051940.
C. Y. Wang, 等. Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor. Sci. Adv., 2020. 6DOI:10.1126/sciadv.aba6173http://doi.org/10.1126/sciadv.aba6173.
X. Hou, 等. A logic-memory transistor with the integration of visible information sensing-memory-processing. Adv. Sci., 2020. 72002072DOI:10.1002/advs.202002072http://doi.org/10.1002/advs.202002072.
S. Y. Wang, 等. A MoS2/PTCDA hybrid heterojunction synapse with efficient photoelectric dual modulation and versatility. Adv. Mater., 2019. 311806227DOI:10.1002/adma.201806227http://doi.org/10.1002/adma.201806227.
C. Choi, 等. Curved neuromorphic image sensor array using a MoS2-organic heterostructure inspired by the human visual recognition system. Nat. Commun., 2020. 115934DOI:10.1038/s41467-020-19806-6http://doi.org/10.1038/s41467-020-19806-6.
E. Funatsu, 等. An artificial retina chip with current-mode focal plane image processing functions. IEEE Trans. Electron Dev., 1997. 441777-1782. DOI:10.1109/16.628836http://doi.org/10.1109/16.628836.
Y. Nitta, 等. Optical learning neurochip with internal analog memory. Appl. Opt., 1993. 321264-1274. DOI:10.1364/AO.32.001264http://doi.org/10.1364/AO.32.001264.
S. Lee, 等. Programmable black phosphorus image sensor for broadband optoelectronic edge computing. Nat. Commun., 2022. 131485DOI:10.1038/s41467-022-29171-1http://doi.org/10.1038/s41467-022-29171-1.
Z. H. Zhang, 等. All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition. Nat. Nanotechnol., 2022. 1727-32. DOI:10.1038/s41565-021-01003-1http://doi.org/10.1038/s41565-021-01003-1.
L. Tong, 等. 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware. Science, 2021. 3731353-1358. DOI:10.1126/science.abg3161http://doi.org/10.1126/science.abg3161.
Y. Nitta, 等. Optical neurochip with learning capability. IEEE Photonics Technol. Lett., 1992. 4247-249. DOI:10.1109/68.122381http://doi.org/10.1109/68.122381.
L. Mennel, 等. Ultrafast machine vision with 2D material neural network image sensors. Nature, 2020. 57962-66. DOI:10.1038/s41586-020-2038-xhttp://doi.org/10.1038/s41586-020-2038-x.
K. Berggren, 等. Roadmap on emerging hardware and technology for machine learning. Nanotechnology, 2020. 32012002DOI:10.1088/1361-6528/aba70fhttp://doi.org/10.1088/1361-6528/aba70f.
F. Wang, 等. Fully depleted self-aligned heterosandwiched van der waals photodetectors. Adv. Mater., 2022. 342203283DOI:10.1002/adma.202203283http://doi.org/10.1002/adma.202203283.
D. B. Strukov, 等. The missing memristor found. Nature, 2008. 45380-83. DOI:10.1038/nature06932http://doi.org/10.1038/nature06932.
J. J. Yang, 等. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol., 2008. 3429-433. DOI:10.1038/nnano.2008.160http://doi.org/10.1038/nnano.2008.160.
L. Chua. Memristor-the missing circuit element. IEEE Trans. Circuit Theory, 1971. 18507-519. DOI:10.1109/TCT.1971.1083337http://doi.org/10.1109/TCT.1971.1083337.
W. Huh, D. Lee, C. H. Lee. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics. Adv. Mater., 2020. 322002092DOI:10.1002/adma.202002092http://doi.org/10.1002/adma.202002092.
X. Fu, 等. Molybdenum disulfide nanosheet/quantum dot dynamic memristive structure driven by photoinduced phase transition. Small, 2019. 151903809DOI:10.1002/smll.201903809http://doi.org/10.1002/smll.201903809.
W. Wang, 等. MoS2 memristor with photoresistive switching. Sci. Rep., 2016. 631224DOI:10.1038/srep31224http://doi.org/10.1038/srep31224.
C. Wang, 等. Scalable massively parallel computing using continuous-time data representation in nanoscale crossbar array. Nat. Nanotechnol., 2021. 161079-1085. DOI:10.1038/s41565-021-00943-yhttp://doi.org/10.1038/s41565-021-00943-y.
M. Wang, 等. Robust memristors based on layered two-dimensional materials. Nat. Electr., 2018. 1130-136. DOI:10.1038/s41928-018-0021-4http://doi.org/10.1038/s41928-018-0021-4.
P. Yao, 等. Fully hardware-implemented memristor convolutional neural network. Nature, 2020. 577641-646. DOI:10.1038/s41586-020-1942-4http://doi.org/10.1038/s41586-020-1942-4.
C. Li, 等. Efficient and self-adaptive in-situ learning in multilayer memristor neural networks. Nat. Commun., 2018. 92385DOI:10.1038/s41467-018-04484-2http://doi.org/10.1038/s41467-018-04484-2.
J. Borghetti, 等. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature, 2010. 464873-876. DOI:10.1038/nature08940http://doi.org/10.1038/nature08940.
H. W. Chen, 等. Logic gates based on neuristors made from two-dimensional materials. Nat. Electr., 2021. 4399-404. DOI:10.1038/s41928-021-00591-zhttp://doi.org/10.1038/s41928-021-00591-z.
W. Kim, 等. Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector. Nat. Commun., 2022. 13720DOI:10.1038/s41467-022-28374-whttp://doi.org/10.1038/s41467-022-28374-w.
S. Bhattacharjee, 等. Hole injection and rectifying heterojunction photodiodes through vacancy engineering in MoS2. Adv. Electr. Mater., 2019. 51800863DOI:10.1002/aelm.201800863http://doi.org/10.1002/aelm.201800863.
A. T. Neal, R. Pachter, S. Mou. P-type conduction in two-dimensional MoS2 via oxygen incorporation. Appl. Phys. Lett., 2017. 110193103DOI:10.1063/1.4983092http://doi.org/10.1063/1.4983092.
S. X. Wu, 等. High-performance p-type MoS2 field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping. 2D Mater., 2019. 6025007DOI:10.1088/2053-1583/aafe2dhttp://doi.org/10.1088/2053-1583/aafe2d.
O. O. Kapitanova, 等. Laterally selective oxidation of large-scale graphene with atomic oxygen. J. Phys. Chem. C, 2017. 12127915-27922. DOI:10.1021/acs.jpcc.7b07840http://doi.org/10.1021/acs.jpcc.7b07840.
B. Park, 等. Stacking-specific reversible oxidation of bilayer graphene. Chem. Mater., 2021. 331249-1256. DOI:10.1021/acs.chemmater.0c04026http://doi.org/10.1021/acs.chemmater.0c04026.
N. C. Frey, 等. Machine learning-enabled design of point defects in 2D materials for quantum and neuromorphic information processing. ACS Nano, 2020. 1413406-13417. DOI:10.1021/acsnano.0c05267http://doi.org/10.1021/acsnano.0c05267.
S. M. Sze, D. J. Jr Coleman, A. Loya. Current transport in metal-semiconductor-metal (MSM) structures. Solid-State Electr., 1971. 141209-1218. DOI:10.1016/0038-1101(71)90109-2http://doi.org/10.1016/0038-1101(71)90109-2.
L. J. Pi, 等. Broadband convolutional processing using band-alignment-tunable heterostructures. Nat. Electr., 2022. 5248-254. DOI:10.1038/s41928-022-00747-5http://doi.org/10.1038/s41928-022-00747-5.
Y. Mulyana, 等. Reversible oxidation of graphene through ultraviolet/ozone treatment and its nonthermal reduction through ultraviolet irradiation. J. Phys. Chem. C, 2014. 11827372-27381. DOI:10.1021/jp508026ghttp://doi.org/10.1021/jp508026g.
S. Kwon, 等. Reversible oxidation states of single layer graphene tuned by electrostatic potential. Surf. Sci., 2013. 61237-41. DOI:10.1016/j.susc.2013.02.010http://doi.org/10.1016/j.susc.2013.02.010.
O. O. Kapitanova, 等. Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation. Nanotechnology, 2017. 28204005DOI:10.1088/1361-6528/aa655chttp://doi.org/10.1088/1361-6528/aa655c.
V. K. Nagareddy, 等. Multilevel ultrafast flexible nanoscale nonvolatile hybrid graphene oxide–titanium oxide memories. ACS Nano, 2017. 113010-3021. DOI:10.1021/acsnano.6b08668http://doi.org/10.1021/acsnano.6b08668.
X. Fu, 等. Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures. Mater. Horizons, 2022. 93095-3101. DOI:10.1039/D2MH00872Fhttp://doi.org/10.1039/D2MH00872F.
F. C. Zhou, 等. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol., 2019. 14776-782. DOI:10.1038/s41565-019-0501-3http://doi.org/10.1038/s41565-019-0501-3.
0
Views
0
Downloads
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution
京公网安备11010802024621