On-chip ultrasensitive and rapid hydrogen sensing based on plasmon-induced hot electron–molecule interaction

Long Wen; Zhiwei Sun; Qilin Zheng; Xianghong Nan; Zaizhu Lou; Zhong Liu; David R. S. Cumming; Baojun Li; Qin Chen

doi:10.1038/s41377-023-01123-4

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On-chip ultrasensitive and rapid hydrogen sensing based on plasmon-induced hot electron–molecule interaction

Original Articles

- On-chip ultrasensitive and rapid hydrogen sensing based on plasmon-induced hot electron–molecule interaction
- Light: Science & Applications Vol. 12, Issue 4, Pages: 625-635(2023)
- Affiliations：
  
  1.Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, 511443, Guangzhou, China
  2.College of Life Science and Technology, Jinan University, 510632, Guangzhou, China
  3.School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
- Author bio：
  
  Qin Chen (chenqin2018@jnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-023-01123-4
  CLC：
- Published：30 April 2023，
  
  Published Online：21 March 2023，
  
  Received：11 October 2022，
  
  Revised：26 February 2023，
  
  Accepted：28 February 2023
Scan for full text
Wen, L.et al. On-chip ultrasensitive and rapid hydrogen sensing based on plasmon-induced hot electron–molecule interaction.Light: Science & Applications,12, 625-635 (2023).
DOI：

Wen, L.et al. On-chip ultrasensitive and rapid hydrogen sensing based on plasmon-induced hot electron–molecule interaction.Light: Science & Applications,12, 625-635 (2023). DOI： 10.1038/s41377-023-01123-4.

摘要

Abstract

Hydrogen energy is a zero-carbon replacement for fossil fuels. However

hydrogen is highly flammable and explosive hence timely sensitive leak detection is crucial. Existing optical sensing techniques rely on complex instruments

while electrical sensing techniques usually operate at high temperatures and biasing condition. In this paper an on-chip plasmonic–catalytic hydrogen sensing concept with a concentration detection limit down to 1 ppm is presented that is based on a metal–insulator–semiconductor (MIS) nanojunction operating at room temperature and zero bias. The sensing signal of the device was enhanced by three orders of magnitude at a one-order of magnitude higher response speed compared to alternative non-plasmonic devices. The excellent performance is attributed to the hydrogen induced interfacial dipole charge layer and the associated plasmonic hot electron modulated photoelectric response. Excellent agreements were achieved between experiment and theoretical calculations based on a quantum tunneling model. Such an on-chip combination of plasmonic optics

photoelectric detection and photocatalysis offers promising strategies for next-generation optical gas sensors that require high sensitivity

low time delay

low cost

high portability and flexibility.

关键词

Keywords

references

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